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Silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications
This article provides an overview of the state-of-the-art chemistry and processing
technologies for silicon nitride and silicon nitride-rich films, ie, silicon nitride with C inclusion …
technologies for silicon nitride and silicon nitride-rich films, ie, silicon nitride with C inclusion …
Wide-angle perfect absorber/thermal emitter in the terahertz regime
We show that a perfect absorber/thermal emitter exhibiting an absorption peak of 99.9% can
be achieved in metallic nanostructures that can be easily fabricated. The very high …
be achieved in metallic nanostructures that can be easily fabricated. The very high …
Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition
Silicon nitride films were deposited at low temperatures (245–370° C) and high deposition
rates (500–1700 Å/min) by hot filament assisted chemical vapor deposition (HFCVD) …
rates (500–1700 Å/min) by hot filament assisted chemical vapor deposition (HFCVD) …
Scaling on-chip photonic neural processors using arbitrarily programmable wave propagation
AlN barriers for capacitance reduction in phase-change RF switches
We demonstrate four-terminal GeTe-based RF switches with independent thermal actuation
(switching). These devices incorporate an AlN-based dielectric separating high-conductivity …
(switching). These devices incorporate an AlN-based dielectric separating high-conductivity …
Electrochemical measurements in in situ TEM experiments
Potential sources of measurement error in electroanalytical analyses performed in-situ
within a transmission electron microscope (TEM) are reported. Some relevant aspects of …
within a transmission electron microscope (TEM) are reported. Some relevant aspects of …
On chip droplet characterization: a practical, high-sensitivity measurement of droplet impedance in digital microfluidics
We demonstrate a new approach to impedance measurement on digital microfluidics chips
for the purpose of simple, sensitive, and accurate volume and liquid composition …
for the purpose of simple, sensitive, and accurate volume and liquid composition …
A tall gate stem GaN HEMT with improved power density and efficiency at Ka-band
In this letter, AlGaN/GaN HEMTs with tall-gate-stem structures were realized to improve the
power performance of Ka-band devices, and a film thinning process is adopted in the …
power performance of Ka-band devices, and a film thinning process is adopted in the …
Two-to-one internal resonance in the higher-order modes of a MEMS beam: Experimental investigation and theoretical analysis via local stability theory
The present study is focused on the dynamics of a microbeam-based MEMS device and
analyzes its behavior in the neighborhood of the third natural frequency. An extensive …
analyzes its behavior in the neighborhood of the third natural frequency. An extensive …