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Semiconductor spintronics with Co2-Heusler compounds
Abstract Ferromagnetic Co2-Heusler compounds showing high spin polarization have been
utilized as spin injectors and detectors for III–V and Group-IV semiconductors. In this article …
utilized as spin injectors and detectors for III–V and Group-IV semiconductors. In this article …
Spin transport and relaxation in germanium
This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the
electrical spin injection from ferromagnets (FM), where Ge is a next generation …
electrical spin injection from ferromagnets (FM), where Ge is a next generation …
Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures
Electrical injection of spin-polarized electrons from ferromagnets into semiconductors has
been generally demonstrated through a tunneling process with insulator barrier layers that …
been generally demonstrated through a tunneling process with insulator barrier layers that …
Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices
Because spin‐orbit coupling in wurtzite semiconductors is relatively weak compared with
that in zincblende ones, the III‐nitride semiconductor GaN is a promising material for high …
that in zincblende ones, the III‐nitride semiconductor GaN is a promising material for high …
Spin Transport and Relaxation up to 250 K in Heavily Doped -Type Ge Detected Using Electrodes
To achieve spin transport in heavily doped n-type Ge (n+-type Ge) in the high-temperature
range (T≥ 130 K), we examine the growth of highly spin-polarized Co 2 FeAl 0.5 Si 0.5 …
range (T≥ 130 K), we examine the growth of highly spin-polarized Co 2 FeAl 0.5 Si 0.5 …
Temperature dependence of spin transport behavior in Heusler alloy CPP-GMR
In this study, we investigate the effect of temperature on the performance of a read sensor by
utilizing an atomistic model coupled with a spin transport model. Specifically, we study the …
utilizing an atomistic model coupled with a spin transport model. Specifically, we study the …
Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
M Yamada, M Tsukahara, Y Fujita, T Naito… - Applied Physics …, 2017 - iopscience.iop.org
We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …
[HTML][HTML] Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe (111) for epitaxial Co-based Heusler alloys
M Yamada, S Suzuki, AI Osaka, K Sumi, T Inoue… - Materials Science in …, 2024 - Elsevier
For high-performance spintronic applications with Co-based Heusler alloys, we explore Si
1− x Ge x (111) grown by liquid phase epitaxy (LPE) with Al–Ge mixed paste, where x is the …
1− x Ge x (111) grown by liquid phase epitaxy (LPE) with Al–Ge mixed paste, where x is the …
Half-metallic property of the bulk and (001) surfaces of MNaCs (M= P, As) half-Heusler alloys: a density functional theory approach
The structural, electronic and half-metallic properties of bulk and (001) surfaces of MNaCs
(M= P, As) half-Heusler alloys are investigated. The half-metallic property have been …
(M= P, As) half-Heusler alloys are investigated. The half-metallic property have been …
Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices
We show direct evidence for the impact of Heusler/semiconductor interfaces atomic structure
on the spin transport signals in semiconductor-based lateral spin-valve (LSV) devices …
on the spin transport signals in semiconductor-based lateral spin-valve (LSV) devices …