Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology?

M Waltl, T Knobloch, K Tselios, L Filipovic… - Advanced …, 2022 - Wiley Online Library
Within the last decade, considerable efforts have been devoted to fabricating transistors
utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been …

Miniaturization of CMOS

HH Radamson, X He, Q Zhang, J Liu, H Cui, J **ang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

W Goes, Y Wimmer, AM El-Sayed, G Rzepa… - Microelectronics …, 2018 - Elsevier
It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …

Controversial issues in negative bias temperature instability

JH Stathis, S Mahapatra, T Grasser - Microelectronics Reliability, 2018 - Elsevier
In spite of 50 years of history, there is still no consensus on the basic physics of Negative
Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric …

Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors

B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu… - ACS …, 2018 - ACS Publications
MoS2 has received a lot of attention lately as a semiconducting channel material for
electronic devices, in part due to its large band gap as compared to that of other 2D …

Ultra-low noise defect probing instrument for defect spectroscopy of MOS transistors

M Waltl - IEEE Transactions on Device and Materials Reliability, 2020 - ieeexplore.ieee.org
It is commonly accepted that the performance and time-to-failure of modern semiconductor
transistors are seriously affected by single defects located in the insulator or at the insulator …

Reliability of miniaturized transistors from the perspective of single-defects

M Waltl - Micromachines, 2020 - mdpi.com
To analyze the reliability of semiconductor transistors, changes in the performance of the
devices during operation are evaluated. A prominent effect altering the device behavior are …

Dark subgap states in metal-halide perovskites revealed by coherent multidimensional spectroscopy

FVA Camargo, T Nagahara, S Feldmann… - Journal of the …, 2019 - ACS Publications
Metal-halide perovskites show excellent properties for photovoltaic and optoelectronic
applications, with power conversion efficiencies of solar cell and LEDs exceeding 20 …

Atomistic modeling of oxide defects

D Waldhoer, AMB El-Sayed, Y Wimmer, M Waltl… - Noise in Nanoscale …, 2020 - Springer
In this chapter we focus on the atomistic modeling of oxide defects in order to shed some
light on the microscopic nature of random telegraph noise (RTN) and bias temperature …

Semi-automated extraction of the distribution of single defects for nMOS transistors

B Stampfer, F Schanovsky, T Grasser, M Waltl - Micromachines, 2020 - mdpi.com
Miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is typically
beneficial for their operating characteristics, such as switching speed and power …