Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high dielectric material in electrically doped TFET …
This article proposes a novel device structure of electrically doped tunnel FET with
drain/gate work function engineering by using hetero-dielectric material for the suppression …
drain/gate work function engineering by using hetero-dielectric material for the suppression …
Impact of gate material engineering on ED‐TFET for improving DC/analogue‐RF/linearity performances
To avoid the fabrication complexity and cost of nanoscale devices, a dual metal gate (DMG)
in polarity controlled electrically doped tunnel field‐effect transistor (ED‐TFET) has been …
in polarity controlled electrically doped tunnel field‐effect transistor (ED‐TFET) has been …
A fair comparison of the performance of charge plasma and electrostatic tunnel FETs for low-power high-frequency applications
A comparative investigation has been carried out on the charge plasma tunnel field-effect
transistor (CP-TFET) and electrically doped TFET (ED-TFET). Both device structures are …
transistor (CP-TFET) and electrically doped TFET (ED-TFET). Both device structures are …
Temperature sensitivity analysis on analog/RF and linearity metrics of electrically doped tunnel FET
In this paper, we have deal with the impact of temperature based on polarity controlled
concept. Therefore, temperature sensitivity on the electrically doped tunnel FET (ED-TFET) …
concept. Therefore, temperature sensitivity on the electrically doped tunnel FET (ED-TFET) …