Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

The presence of electronic traps in GaN-based transistors limits device performance and
reliability. It is believed that material defects and electronic states on GaN surface act as the …

This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility …

III-V compound semiconductor-based light emitting devices (LEDs) operating in ultraviolet to
visible wavelength ranges are greatly important for their applications, including displays …

Effects of device processing on chemical and electronic properties of AlGaN surfaces were
investigated. The X-ray photoelectron spectroscopy analysis showed serious deterioration …

In this report, the impact of different mesa designs on the optical and electrical
characteristics for GaN-based micro-light emitting diodes (µLEDs) has been systematically …

In this article, a low-leakage-current and high-breakdown-voltage normally OFF p-GaN gate
high-electron-mobility transistor (HEMT) on a Si substrate with low-damage NH3 plasma …

Plasma-induced damage was reduced by multistep-bias etching that involved a stepwise
decrease of the etching bias power (P bias) and subsequent annealing. The depth of …

A trench-gate metal-oxide-semiconductor field-effect transistor (T-MOSFET) has great
potential for use in gallium nitride (GaN)-based vertical power switching devices owing to its …

The fin-gate structure was fabricated onto AlGaN/GaN MOS channel-high electron mobility
transistors (MOSC-HEMTs), and the fin sidewall contribution to the MOS channel …