EUV-induced hydrogen plasma: pulsed mode operation and confinement in scanner
M van de Kerkhof, AM Yakunin… - Journal of Micro …, 2021 - spiedigitallibrary.org
In recent years, EUV lithography scanner systems have entered high-volume manufacturing
for state-of-the-art integrated circuits, with critical dimensions down to 10 nm. This …
for state-of-the-art integrated circuits, with critical dimensions down to 10 nm. This …
Uncertainties in the reconstruction of nanostructures in EUV scatterometry and grazing incidence small-angle X-ray scattering
Increasing miniaturization and complexity of nanostructures require innovative metrology
solutions with high throughput that can assess complex 3D structures in a non-destructive …
solutions with high throughput that can assess complex 3D structures in a non-destructive …
Wavelength-specific reflections: A decade of extreme ultraviolet actinic mask inspection research
Mask inspection is essential for the success of any pattern transfer lithography technology,
and extreme ultraviolet lithography (EUVL), in particular, faces unique challenges. EUV …
and extreme ultraviolet lithography (EUVL), in particular, faces unique challenges. EUV …
Study of EUV reticle storage effects through exposure on EBL2 and NXE
R Jonckheere, CC Wu… - Extreme Ultraviolet …, 2020 - spiedigitallibrary.org
A parallelism is reported between reticle lifetime experiments undertaken on TNO's EBL2
platform and wafer printing on the ASML NXE EUV scanner installed at imec. EBL2 mimics …
platform and wafer printing on the ASML NXE EUV scanner installed at imec. EBL2 mimics …
Predicting radiation-induced carbon contamination of EUV optics
JT Hollenshead, LE Klebanoff… - Journal of Vacuum Science …, 2019 - pubs.aip.org
Predictions are made for the radiation-induced carbon contamination threat to ruthenium-
coated extreme ultraviolet (EUV) optics for a range of incident EUV intensities, exposure …
coated extreme ultraviolet (EUV) optics for a range of incident EUV intensities, exposure …
Contamination Removal From UV and EUV Photomasks
In semiconductor fabrication industries, photomask cleaning with no pattern damage is a
critical issue, especially for advanced technology nodes. Thus, optimization of cleaning …
critical issue, especially for advanced technology nodes. Thus, optimization of cleaning …
Opportunities of polarization-resolved EUV scatterometry on photomasks
The development of EUV scatterometry, as a potentially interesting option for the
characterization of photomasks, has made significant progress in the last decade. The at …
characterization of photomasks, has made significant progress in the last decade. The at …
[HTML][HTML] Actinic critical dimension measurement of contaminated extreme ultraviolet mask using coherent scattering microscopy
The authors evaluated the feasibility of using coherent scattering microscopy (CSM) as an
actinic metrology tool by employing it to determine the critical dimension (CD) and …
actinic metrology tool by employing it to determine the critical dimension (CD) and …
Carbon contamination of EUV mask and its effect on CD performance
The carbon contamination on extreme ultraviolet (EUV) masks is a critical issue causing
throughput degradation and unexpected effects on imaging performance. In this work, a …
throughput degradation and unexpected effects on imaging performance. In this work, a …
[PDF][PDF] Determination of the CD performance and carbon contamination of an EUV mask by using a coherent scattering microscopy/in-situ contamination system
Extreme ultraviolet lithography (EUVL) is one of the leading candidates for next-generation
lithography technology for the 32-nm half-pitch node and beyond [1]. However, carbon …
lithography technology for the 32-nm half-pitch node and beyond [1]. However, carbon …