High-pressure phases of group-IV, III–V, and II–VI compounds

A Mujica, A Rubio, A Munoz, RJ Needs - Reviews of modern physics, 2003 - APS
Advances in the accuracy and efficiency of first-principles electronic structure calculations
have allowed detailed studies of the energetics of materials under high pressures. At the …

Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures

J Serrano, A Rubio, E Hernández, A Muñoz, A Mujica - Physical Review B, 2000 - APS
We present the results of a first-principles theoretical study of the relative stability of several
structural phases of the group–III nitrides AlN, GaN, and InN that complements the picture of …

High-pressure phases of group IV and III-Vsemiconductors

GJ Ackland - Reports on Progress in Physics, 2001 - iopscience.iop.org
High-pressure phases of group IV and III-V semiconductors - IOPscience Skip to content
IOP Science home Accessibility Help Search Journals Journals list Browse more than 100 …

Low-energy tetrahedral polymorphs of carbon, silicon, and germanium

A Mujica, CJ Pickard, RJ Needs - Physical Review B, 2015 - APS
Searches for low-energy tetrahedral polymorphs of carbon and silicon have been performed
using density functional theory computations and the ab initio random structure searching …

Accurate critical pressures for structural phase transitions of group IV, III-V, and II-VI compounds from the SCAN density functional

C Shahi, J Sun, JP Perdew - Physical Review B, 2018 - APS
Most of the group IV, III-V, and II-VI compounds crystallize in semiconductor structures under
ambient conditions. Upon application of pressure, they undergo structural phase transitions …

First-principles study on structural properties and phase stability of III-phosphide (BP, GaP, AlP and InP)

O Arbouche, B Belgoumène, B Soudini, Y Azzaz… - Computational materials …, 2010 - Elsevier
We have performed first principles total-energy calculations based on the full-potential
augmented plane-wave plus local orbitals (FP-LAPW+ lo) method in order to investigate the …

First-principles study on phases of AlP

R Yang, C Zhu, Q Wei, D Zhang - Solid state communications, 2017 - Elsevier
Four potential novel phases of AlP (Pmn2 1-AlP, Pbam-AlP, Pbca-AlP and bct-AlP) are
proposed in this study and the stabilities are verified by the enthalpy, independent elastic …

Simulation of electronic structure of aluminum phosphide nanocrystals using ab initio large unit cell method

HR Jappor, ZA Saleh… - Advances in Materials …, 2012 - Wiley Online Library
Ab initio restricted Hartree‐Fock method coupled with the large unit cell method is used to
determine the electronic structure and physical properties of aluminum phosphide (AlP) …

High-pressure band parameters for GaAs: first principles calculations

S Saib, N Bouarissa - Solid-state electronics, 2006 - Elsevier
Structural and electronic parameters of zincblende GaAs are obtained from density-
functional-theory calculations utilizing an ab initio total energy pseudopotential technique …

Pressure dependence of the electronic structure in Ge, GaP and InP semiconductors at room temperature

AR Degheidy, AM Elabsy, HG Abdelwahed… - Indian Journal of …, 2012 - Springer
The electronic structure of Ge, GaP and InP semiconductors under hydrostatic pressure
based on the empirical pseudopotential method have been reported. The pressure …