GaAs (0 0 1) has been one of the most intensively studied surfaces for the past 30 years due
both to its importance as a substrate for epitaxial growth and to the challenge its phase …

In recent years, the self-assembled growth of semiconductor nanostructures, that show
quantum size effects, has been of considerable interest. Laser devices operating with self …

InAs was grown by molecular-beam epitaxy onto GaAs (001) until quantum dots (QDs)
formed. At this point, the growth was interrupted and the uncovered QDs were investigated …

The equilibrium crystal shapes of the group-IV materials diamond, Si, and Ge are
constructed based on surface energies obtained by means of ab initio calculations. The …

Local InGaN quantum well (QW) decomposition and resultant inhomogeneous
luminescence in green laser diode (LD) epitaxial structures are investigated using micro …

Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The
QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by …

We present results about the growth of GaAs/InAs core–shell nanowires (NWs) using
molecular beam epitaxy. The core is grown via the Ga droplet-assisted growth mechanism …

We demonstrate how first-principles calculations using density-functional theory (DFT) can
be applied to gain insight into the molecular processes that rule the physics of materials …

For heteroepitaxial growth of InAs islands on GaAs (001), a transition of shapes is observed
experimentally by scanning-tunneling microscopy and analyzed theoretically in terms of the …

We present a first-principles analysis of the strain renormalization of the cation diffusivity on
the GaAs (001) surface. For the example of I n/G a A s (001)− c (4× 4) it is shown that the …