ROS, an open-source robot operating system, is widely used and rapidly developed in the
robotics community. However, running on Linux, ROS does not provide real-time …

By stacking layers vertically, the adoption of 3D NAND has significantly increased the
capacity for storage systems. The complex structure of 3D NAND introduces more errors …

Flash memory development through technology scaling and bit density has significant
impact on the reliability of flash cells. Hence strong error correction code (ECC) schemes are …

NAND flash memory has been widely deployed in embedded systems, personal computers,
and data centers. While recent technology scaling and density improvement have reduced …

Substantially reduced lifetimes are becoming a critical issue in NAND flash memory with the
advent of multi-level cell and triple-level cell flash memory. Researchers discovered that …

High-density NAND flash memories have been prevailing in storage systems to achieve
large capacities for explosive data. However, they suffer from more severe reliability …

Program disturb, read disturb, and retention time noise are identified as three major
contributors to multilevel cell (MLC) NAND flash memory bit errors. With program/erase …

The introduction of multiple-level cell (MLC) and triple-level cell (TLC) technologies reduced
the reliability of flash memories significantly compared with single-level cell flash. With MLC …

The rapid development of information technology has put data at the heart of modern
production, and data is now experiencing a period of tremendous growth. In 2019, the …

Nowadays, flash memory and especially NAND flash memory are very important storage
medium in industrial application. NAND flash memory provides high-density, low-latency …