Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …

Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …

The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …

In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN)
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …

Electrically pumped nanolasers have achieved many exciting achievements and display a
wide range of potential application prospects in the fields of optoelectronic chips, information …

Spontaneously grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still
suffer from low efficiency partially because of the strong surface recombination caused by …

Deep ultraviolet (UV) lasers are essential for enormous use ranging from medical and life
science to environmental and industrial applications. Herein, a class of blue‐pumped …