A first tier structure including a first alternating stack of first insulating layers and first
sacrificial material layers is formed over a substrate. First support openings and first memory …

(57) ABSTRACT A vertical, columnar resistor in a semiconductor device is provided, along
with techniques for fabricating Such a resistor. The resistor may be provided in a peripheral …

An integrated circuit (IC) device includes: a channel region that extends on the substrate to
penetrate a plurality of word lines; a bit line contact pad that contacts an upper surface of the …

(57) ABSTRACT A three-dimensional memory device includes an alternating stack having
stepped surfaces and including insulating lay ers and electrically conductive layers, memory …

(74) Attorney, Agent, or Firm—IP & T Group LLP (57) ABSTRACT A non-volatile memory
device and a method of manufac turing the same are provided. The device includes a …

A vertical-type nonvolatile memory device includes a first vertical channel structure, and first
and second stacked structure. The first vertical channel structure extends vertically on a …

According to one embodiment, a semiconductor memory device includes a stacked body
including a plurality of electrode layers and a plurality of inter-layer insulating layers each …

A three-dimensional memory device includes an alternating stack of insulating layers and
electrically conductive layers located over a substrate. Memory stack structures are located …

A semiconductor memory device includes a first semiconductor chip and a second
semiconductor chip. Each semiconductor chip of the first and second semiconductor chips …

A 3D semiconductor device includes an electrode structure has electrodes stacked on a
substrate, semiconductor patterns penetrating the electrode structure, charge storing …