A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
[HTML][HTML] Fabrication of millimeter-long structures in sapphire using femtosecond infrared laser pulses and selective etching
This paper analyzes laser and etching parameters to fabricate open and continuous
microchannels and stacks of such microchannels in the bulk of crystalline sapphire (α-Al 2 O …
microchannels and stacks of such microchannels in the bulk of crystalline sapphire (α-Al 2 O …
Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire
Q Sun, BH Kong, CD Yerino, TS Ko, B Leung… - Journal of Applied …, 2009 - pubs.aip.org
In this paper, we report a detailed study on the evolution of surface morphology and
microstructure of nonpolar a-plane GaN (a-GaN) through controlled growth interruptions …
microstructure of nonpolar a-plane GaN (a-GaN) through controlled growth interruptions …
Excitons in nitride heterostructures: From zero-to one-dimensional behavior
We report an unusual temperature dependence of exciton lifetimes in arrays of GaN
nanostructures grown on semipolar (11-22) oriented Al 0.5 Ga 0.5 N alloy by molecular …
nanostructures grown on semipolar (11-22) oriented Al 0.5 Ga 0.5 N alloy by molecular …
Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN
InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm,
experience lattice mismatch strain relaxation by the generation of stacking faults. Each …
experience lattice mismatch strain relaxation by the generation of stacking faults. Each …
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency
We investigate the nature of excitons bound to I 1 basal-plane stacking faults [(I 1, X)] in GaN
nanowire ensembles by continuous-wave and time-resolved photoluminescence …
nanowire ensembles by continuous-wave and time-resolved photoluminescence …
Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy
The waveguide properties are reported for wide bandgap gallium nitride (GaN) structures
grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period …
grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period …
Optical emission of individual GaN nanocolumns analyzed with high spatial resolution
A Urban, M Müller, C Karbaum, G Schmidt, P Veit… - Nano …, 2015 - ACS Publications
Selective area growth has been applied to fabricate a homogeneous array of GaN
nanocolumns (NC) with high crystal quality. The structural and optical properties of single …
nanocolumns (NC) with high crystal quality. The structural and optical properties of single …
Photoluminescence and Raman studies of GaN films grown by MOCVD
The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was
investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K …
investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K …
Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal-phase quantum disks in GaAs nanowires
Crystal-phase engineering has emerged as a novel method of bandgap engineering, made
feasible by the high surface-to-volume ratio of nanowires. There remains intense debate …
feasible by the high surface-to-volume ratio of nanowires. There remains intense debate …