The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …

Fully exploiting the silicon photonics platform for large-volume, cost-sensitive applications
requires a fundamentally new approach to directly integrate high-performance laser sources …

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …

In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated
on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030 μS/μm at V ds= 0.5 V is …

After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of
diminishing returns. The use of new semiconductor channel materials with improved …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

In this paper, the effect of carrier quantization on device characteristics and stress-induced
device degradation for multifin high-κ/metal tri-gate n-type and p-type fin field-effect …

Total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO 2/Al
2 O 3 gate-stack. Transistors are irradiated up to 500 krad (SiO 2) and annealed at high …

We study the scaling properties of self-aligned InGaAs FinFETs with sub-10-nm fin widths
fabricated through a CMOS compatible front-end process. Working devices with fins as …