Memory effects in complex materials and nanoscale systems

YV Pershin, M Di Ventra - Advances in Physics, 2011 - Taylor & Francis
Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where
the dynamical properties of electrons and ions strongly depend on the history of the system …

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

F Palumbo, C Wen, S Lombardo… - Advanced Functional …, 2020 - Wiley Online Library
Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …

Dielectric breakdown of oxide films in electronic devices

A Padovani, P La Torraca, J Strand, L Larcher… - Nature Reviews …, 2024 - nature.com
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

A peridynamic formulation for transient heat conduction in bodies with evolving discontinuities

F Bobaru, M Duangpanya - Journal of Computational Physics, 2012 - Elsevier
We introduce a multidimensional peridynamic formulation for transient heat-transfer. The
model does not contain spatial derivatives and uses instead an integral over a region …

Electron confinement–induced plasmonic breakdown in metals

P Das, S Rudra, D Rao, S Banerjee, A Indiradevi… - Science …, 2024 - science.org
Plasmon resonance represents the collective oscillation of free electron gas density and
enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the …

Thermochemical resistive switching: materials, mechanisms, and scaling projections

D Ielmini, R Bruchhaus, R Waser - Phase Transitions, 2011 - Taylor & Francis
In this article, resistive switching based on the thermochemical mechanism (TCM) is
reviewed. This mechanism is observed when thermochemical redox processes dominate …

Localized dielectric breakdown and antireflection coating in metal–oxide–semiconductor photoelectrodes

L Ji, HY Hsu, X Li, K Huang, Y Zhang, JC Lee… - Nature Materials, 2017 - nature.com
Silicon-based photoelectrodes for solar fuel production have attracted great interest over the
past decade, with the major challenge being silicon's vulnerability to corrosion. A metal …

Significant enhancement in breakdown strength and energy density of the BaTiO3/BaTiO3@ SiO2 layered ceramics with strong interface blocking effect

Q Yuan, J Cui, Y Wang, R Ma, H Wang - Journal of the European Ceramic …, 2017 - Elsevier
Abstract The BaTiO 3/BaTiO 3@ SiO 2 (BT/BTS) ceramics with layered structure, where
grain size was about 1–2 μm in the BT layer while it was about 300–400 nm in the BTS …

Adhesion microscopy as a nanoscale probe for oxidation and charge generation at metal-oxide interfaces

A Ranjan, A Padovani, B Dianat… - ACS Applied …, 2023 - ACS Publications
We introduce a method combining adhesion and conductivity measurements using
conduction atomic force microscopy (AFM) to infer the localized surface redox reactions and …

[HTML][HTML] Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy

A Ranjan, H Xu, C Wang, J Molina, X Wu, H Zhang… - Applied Materials …, 2023 - Elsevier
In this work, we investigate the resistive switching in hafnium dioxide (HfO 2) and aluminum
oxide (Al 2 O 3) bilayered stacks using in-situ transmission electron microscopy and X-ray …