Memory effects in complex materials and nanoscale systems
Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where
the dynamical properties of electrons and ions strongly depend on the history of the system …
the dynamical properties of electrons and ions strongly depend on the history of the system …
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …
and they have played a key role in the huge development that the semiconductor industry …
Dielectric breakdown of oxide films in electronic devices
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
A peridynamic formulation for transient heat conduction in bodies with evolving discontinuities
F Bobaru, M Duangpanya - Journal of Computational Physics, 2012 - Elsevier
We introduce a multidimensional peridynamic formulation for transient heat-transfer. The
model does not contain spatial derivatives and uses instead an integral over a region …
model does not contain spatial derivatives and uses instead an integral over a region …
Electron confinement–induced plasmonic breakdown in metals
Plasmon resonance represents the collective oscillation of free electron gas density and
enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the …
enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the …
Thermochemical resistive switching: materials, mechanisms, and scaling projections
In this article, resistive switching based on the thermochemical mechanism (TCM) is
reviewed. This mechanism is observed when thermochemical redox processes dominate …
reviewed. This mechanism is observed when thermochemical redox processes dominate …
Localized dielectric breakdown and antireflection coating in metal–oxide–semiconductor photoelectrodes
Silicon-based photoelectrodes for solar fuel production have attracted great interest over the
past decade, with the major challenge being silicon's vulnerability to corrosion. A metal …
past decade, with the major challenge being silicon's vulnerability to corrosion. A metal …
Significant enhancement in breakdown strength and energy density of the BaTiO3/BaTiO3@ SiO2 layered ceramics with strong interface blocking effect
Abstract The BaTiO 3/BaTiO 3@ SiO 2 (BT/BTS) ceramics with layered structure, where
grain size was about 1–2 μm in the BT layer while it was about 300–400 nm in the BTS …
grain size was about 1–2 μm in the BT layer while it was about 300–400 nm in the BTS …
Adhesion microscopy as a nanoscale probe for oxidation and charge generation at metal-oxide interfaces
We introduce a method combining adhesion and conductivity measurements using
conduction atomic force microscopy (AFM) to infer the localized surface redox reactions and …
conduction atomic force microscopy (AFM) to infer the localized surface redox reactions and …
[HTML][HTML] Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy
In this work, we investigate the resistive switching in hafnium dioxide (HfO 2) and aluminum
oxide (Al 2 O 3) bilayered stacks using in-situ transmission electron microscopy and X-ray …
oxide (Al 2 O 3) bilayered stacks using in-situ transmission electron microscopy and X-ray …