Recent progress of indium-bearing group-III nitrides and devices: a review
Y He, L Li, J **ao, L Liu, G Li, W Wang - Optical and Quantum Electronics, 2024 - Springer
During the past decades, group-III nitrides have emerged as a new impetus for the
development of semiconductor industry and attracted significant attentions in different fields …
development of semiconductor industry and attracted significant attentions in different fields …
Modeling the electroluminescence of atomic wires from quantum dynamics simulations
Static and time-dependent quantum-mechanical approaches have been employed in the
literature to characterize the physics of light-emitting molecules and nanostructures …
literature to characterize the physics of light-emitting molecules and nanostructures …
Membrane thickness dependence of the suspended mini-LED on visible light communication
Z Shi, T **e, T Chang, M **e, T Yu, Z Li, Y Jiang… - Optics …, 2024 - opg.optica.org
This study proposes a suspended thin-film blue light emitting diode (LED) device using
backside processing to enhance the performance and light extraction efficiency (LEE) of …
backside processing to enhance the performance and light extraction efficiency (LEE) of …
[HTML][HTML] Thermal Optimization of Edge-Emitting Lasers Arrays
RP Sarzała, D Dąbrówka, M Dems - Materials, 2024 - mdpi.com
This paper presents a novel approach to address the issue of uneven temperature
distribution in one-dimensional laser arrays, specifically in gallium nitride edge-emitting …
distribution in one-dimensional laser arrays, specifically in gallium nitride edge-emitting …
Investigation into the Effects of Cross-Sectional Shape and Size on the Light-Extraction Efficiency of GaN-Based Blue Nanorod Light-Emitting Diode Structures
B Lee, HY Ryu - Crystals, 2024 - mdpi.com
We investigated the effect of cross-sectional shape and size on the light-extraction efficiency
(LEE) of GaN-based blue nanorod light-emitting diode (LED) structures using numerical …
(LEE) of GaN-based blue nanorod light-emitting diode (LED) structures using numerical …
Tuning performance: strain modulation of GaAs layers grown on meso-porous silicon substrates
A Saidi, I Zeydi, MHH Alouane… - Journal of Materials …, 2024 - Springer
A novel compliant substrate, comprising mono-layers (PS1, PS2) and multi-layers (PSML1,
PSML2) of porous silicon structures, fabricated using galvanostatic mode, was employed for …
PSML2) of porous silicon structures, fabricated using galvanostatic mode, was employed for …
Investigation on the Morphology, Geometric Distribution, and Local Kinetic Evolution Mechanism of the Electrochemically Etched Gaas (001) Surface with Crystalline …
Q Lang, Z Ding, Y Cao - … , and Local Kinetic Evolution Mechanism of the … - papers.ssrn.com
The electrochemical etching of n-type GaAs (001) surface with crystalline defects in (NH4)
2SO4 and the concentration of 40% HF mixed solution in the light resulted in the formation of …
2SO4 and the concentration of 40% HF mixed solution in the light resulted in the formation of …