Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …

In the future, electronic parts will penetrate everything, generating a new and fast-growing
pollution problem. Future devices therefore need to be environmentally friendly with strong …

Heterojunctions consisting of p-type diamond substrates and thin exfoliated n-type β-Ga 2 O
3 layers were fabricated at a low temperature using a direct-bonding technique. We have …

High crystalline quality heteroepitaxial diamond films were successfully formed by using grid-
patterned growth on Ir with dc plasma CVD. The crystalline qualities were evaluated by X …

A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for
understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is …

We report the fabrication of pn+ diamond homojunction through an innovative approach of
laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric …

A major obstacle limiting diamond electronics is dislocations, which deteriorate device
properties. As threading dislocations (TDs) are normally inherited from the substrate to the …

The growth of large-area diamond films with low dislocation density is a landmark in the
fabrication of diamond-based power electronic devices or high-energy particle detectors …

Thick epitaxial GaN power switching devices are known to contain a high density of crystal
defects, especially threading dislocations in the epitaxial layer. The impact of these defects …

Diamond, with its outstanding physicochemical properties, stands out as an ideal material
for nonlinear optical applications. However, the subpar optical performance of commercial …