Emerging Versatile Two‐Dimensional MoSi2N4 Family
The discovery of 2D layered MoSi2N4 and WSi2N4 without knowing their 3D parents by
chemical vapor deposition in 2020 has stimulated extensive studies of 2D MA2Z4 system …
chemical vapor deposition in 2020 has stimulated extensive studies of 2D MA2Z4 system …
A new family of septuple-layer 2D materials of MoSi2N4-like crystals
Recently synthesized MoSi2N4 is the first septuple-layer two-dimensional material, which
does not naturally occur as a layered crystal, and has been obtained with chemical vapour …
does not naturally occur as a layered crystal, and has been obtained with chemical vapour …
Tunable Schottky barrier of WSi2N4/graphene heterostructure via interface distance and external electric field
X Ma, H Bo, X Gong, G Yuan, Z Peng, J Lu… - Applied Surface Science, 2023 - Elsevier
Improving the electric transport of field-effect transistors based on heterostructure (HTS) is a
stern challenge by the reduction of the interfacial barrier. Herein, the electronic properties of …
stern challenge by the reduction of the interfacial barrier. Herein, the electronic properties of …
Electronic and Excitonic Properties of MSi2Z4 Monolayers
MA2Z4 monolayers form a new class of hexagonal non‐centrosymmetric materials hosting
extraordinary spin‐valley physics. While only two compounds (MoSi2N4 and WSi2N4) are …
extraordinary spin‐valley physics. While only two compounds (MoSi2N4 and WSi2N4) are …
First-principle study on quintuple-atomic-layer Janus MTeSiX2 (M= Mo, W; X= N, P, As) monolayers with intrinsic Rashba spin-splitting and Mexican hat dispersion
In this research, inspired by the electron's spin nature and its unique induced phenomena,
we probe into the structural, electronic and spintronic features of Janus MTeSiX 2 (M= Mo …
we probe into the structural, electronic and spintronic features of Janus MTeSiX 2 (M= Mo …
Monolayer : A promising channel material for sub-5-nm-gate homogeneous CMOS devices
Complementary metal oxide semiconductor (CMOS) devices require both n-type and p-type
metal-oxide-semiconductor field-effect transistors (MOSFETs), but achieving both types that …
metal-oxide-semiconductor field-effect transistors (MOSFETs), but achieving both types that …
Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA2Z4: A bond relaxation investigation
Understanding the physical mechanism behind atomic-size dependence of the bandgap,
phonon frequency, and mechanical strength in various monolayered MA 2 Z 4 is of crucial …
phonon frequency, and mechanical strength in various monolayered MA 2 Z 4 is of crucial …
Electronic and spintronic properties of Janus ( = Mo, W) monolayers
Very recently, Janus two-dimensional (2D) materials have gathered enormous attention due
to possessing unique properties caused by the lack of out-of-plane symmetry. Herein, based …
to possessing unique properties caused by the lack of out-of-plane symmetry. Herein, based …
MoSi2N4: A 2D Regime with Strong Exciton–Phonon Coupling
The exciton and phonon strong coupling in functional materials is rich of physics and has
promising applications in modern optoelectronics and photonics. However, the direct …
promising applications in modern optoelectronics and photonics. However, the direct …
Strain modulated electronic and optical properties of laterally stitched MoSi2N4/XSi2N4 (X= W, Ti) 2D heterostructures
We used first-principles calculations to investigate the laterally stitched monolayered MoSi 2
N 4/XSi 2 N 4 (X= W, Ti) two-dimensional heterostructures. The structural stability of such …
N 4/XSi 2 N 4 (X= W, Ti) two-dimensional heterostructures. The structural stability of such …