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Preparation and characteristics study of nano-porous silicon UV photodetector
In this study, influence of rapid thermal oxidation RTO and embedding of gold nanoparticles
on the performance of porous silicon photodetector synthesised by anodization technique …
on the performance of porous silicon photodetector synthesised by anodization technique …
High-performance metal-semiconductor-metal ZnSnO UV photodetector via controlling the nanocluster size
CY Huang, TJ Lin, PC Liao - Nanotechnology, 2020 - iopscience.iop.org
Solution processing of amorphous oxide semiconductors (AOS) is used for electronic and
optoelectronic applications. However, the device performance is much lower than that for a …
optoelectronic applications. However, the device performance is much lower than that for a …
An investigation of photo_electrical properties of silicon nanoparticles/PSi/p-Si hetero structures
AB Dheyab, MM Azzawi, AA Dhaigham - Optical and Quantum Electronics, 2023 - Springer
In this work, two forms of nanocrystalline, were used (as-prepared macroPorous silicon and
silicon nanoparticle) to synthesize hybrid structures for photodetectors applications. The …
silicon nanoparticle) to synthesize hybrid structures for photodetectors applications. The …
[PDF][PDF] A theoretical and experimental evaluation of III–nitride solar-blind UV photocathode
B Ren, H Guo, F Shi, HC Cheng, H Liu, J Liu, ZH Shen… - Chin Phys B, 2017 - cpb.iphy.ac.cn
We have developed a superior solar-blind ultraviolet (UV) photocathode with an AlxGa1− xN
photocathode (x∼ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity …
photocathode (x∼ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity …
An investigation of photo_Electrical Properties of Silicon Nanoparticles/PSi/p-Si Hetero Structures
MM Azzawi, AA Dhaigham - 2022 - researchsquare.com
In this work, two forms of nanocrystalline, were used (as-prepared macroPorous silicon and
silicon nanoparticle) to synthesize hybrid structures for photodetectors applications. The …
silicon nanoparticle) to synthesize hybrid structures for photodetectors applications. The …
[PDF][PDF] 基于标准 CMOS 工艺的 UV/blue 光电探测器
董威锋, 谢生, 毛陆虹, 廖建文, 朱长举, 乔静 - 光子学报, 2017 - researching.cn
基于UMC0. 18μmCMOS 工艺, 提出一种适合紫外/蓝光探测的探测器, 该器件由栅体互联的
NMOS 晶体管和横向/纵向光电二极管构成. 其中, 浅结的光电二极管由UMC 工艺中Twell …
NMOS 晶体管和横向/纵向光电二极管构成. 其中, 浅结的光电二极管由UMC 工艺中Twell …
Study of monolithic integrated solar blind GaN-based photodetectors
L Wang, Y Zhang, X Li, J **e, J Wang… - Materials Research …, 2018 - iopscience.iop.org
Monolithic integrated solar blind devices on the GaN-based epilayer, which can directly
readout voltage signal, were fabricated and studied. Unlike conventional GaN-based …
readout voltage signal, were fabricated and studied. Unlike conventional GaN-based …
[TRÍCH DẪN][C] 高响应度的 NMOS 型栅体互连光电探测器
谢生, 王雪飞, 兰馗博, 毛陆虹, 董威锋, 丛佳, 孙邵凡 - 天津大学学报 (自然科学与 …, 2019