At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific
compositions with precise structures and controlled interfaces. This will enable the …

In this article, room temperature ethanol sensing behavior of p-type Ce doped SnO2
nanostructures are investigated successfully. Interestingly, it is examined that the abnormal …

Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …

A rational bottom-up engineering strategy for efficient electrocatalysts based on atomic layer
deposition (ALD) is reported. The strategy involves compositional optimization of surface …

GaN power technology, especially AlGaN/GaN high electron-mobility transistors (HEMTs),
has made significant progress in recent years. However, the performance of HEMTs is still …

One field of organometallic and materials chemistry that has seen great advancements over
the last 20 years is that of atomic layer deposition (ALD), and in particular the development …

We have demonstrated high-performance InAlN/GaN MOS high-electron-mobility-transistors
(MOSHEMTs) with various channel lengths () of 85–250 nm using atomic-layer-epitaxy …