This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

This paper provides a tutorial overview over recent vigorous efforts to develop computing
systems based on spin waves instead of charges and voltages. Spin-wave computing can …

Over the past few decades, magnetoelectric (ME) materials and devices have been
investigated extensively, which is one of the most interesting research topics since the …

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching
times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high …

The possibility of tuning the magnetic properties of materials with voltage (converse
magnetoelectricity) or generating electric voltage with magnetic fields (direct …

Novel computational paradigms may provide the blueprint to help solving the time and
energy limitations that we face with our modern computers, and provide solutions to complex …

The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …

Electric fields at interfaces exhibit useful phenomena, such as switching functions in
transistors, through electron accumulations and/or electric dipole inductions. We find one …

Magnetoelectric effect enables controlling magnetism with an electric field or controlling
polarization remotely with a magnetic field, without involving any driving electric currents …