An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools

Q Huang, J Jiang - Progress in Nuclear Energy, 2019 - Elsevier
New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …

Radiation protection of W–Al composite films/coatings for aviation using genetic algorithms

S Chen, L Yang, J Shen - Journal of Physics and Chemistry of Solids, 2025 - Elsevier
This study evaluated electron shielding capabilities of various materials using Geant4 Monte
Carlo software. By analyzing materials with different atomic numbers, we designed and …

Characterization of a Fault-Tolerant RISC-V System-on-Chip for Space Environments

DA Santos, AMP Mattos, DR Melo… - 2023 IEEE International …, 2023 - ieeexplore.ieee.org
Processing units are sensitive to the harsh radiation conditions present in space
applications. Thus, radiation testing is a mandatory step toward high reliability for these …

The octagonal-cross-by-pass-mesh topology design for the on-chip-communication

UA Gulzari, W Farooq, SNM Shah, IA Khan, S Anjum… - Computer Networks, 2025 - Elsevier
This article presents the novel Octagonal-Cross-By-Pass-Mesh (Octa-CBP-Mesh) network
topology design for on-chip communication. We have recently presented the cross-by-pass …

[HTML][HTML] Radiation tolerance of the PNI RM3100 magnetometer for a Europa lander mission

LH Regoli, MB Moldwin, C Raines… - … , Methods and Data …, 2020 - gi.copernicus.org
The results of two radiation test campaigns on a low-cost commercial off-the-shelf
magnetometer are presented. The test setup and the total ionization dose (TID) levels …

3D numerical simulation of a Z gate layout MOSFET for radiation tolerance

Y Wang, C Shan, W Piao, X Li, J Yang, F Cao, C Yu - Micromachines, 2018 - mdpi.com
In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor
(NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is …

Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate

A Ray, A Naugarhiya, GP Mishra - Physica Scripta, 2024 - iopscience.iop.org
The total ionizing dose (TID) effect of modulated gate workfunction (MGW) FinFET based
CMOS inverter is designed and analyzed. The post radiation analysis of the voltage transfer …

Examination of radiation effects on Cs2LiYCl6:Ce3+ scintillators using a 100 MeV proton beam

U Nam, S Youn, WK Park, J Pyo, J Sohn… - Journal of the Korean …, 2022 - Springer
Abstract Cs2LiYCl6: Ce3+ scintillator is worthwhile to study, since it has good pulse shape
discrimination capability which lead to thermal or fast neutron detection based on the …

[PDF][PDF] Calliope 60Co gamma irradiation facility for space qualification at ENEA-casaccia research centre (Rome)

S Baccaro, A Cemmi, I Di Sarcina - Phys Astron Int J, 2019 - academia.edu
The radiation damage induced by hostile environment on optical and electronic components
and devices underwent several studies since last decades. In order to evaluate the radiation …

Radiation tolerance impact of trap density near the drain and source regions of a MOSFET

S İlik, FB Gencer, NŞ Solmaz, A Çağlar… - Nuclear Instruments and …, 2019 - Elsevier
In this paper, different sized NMOS devices, with the drain and gate terminals connected to
1.8 V and other terminals connected to ground potential, were irradiated. The effects of …