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Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants
Attaining the ferroelectric (FE) polarization in a thin HfO 2 layer using a specific dopant is a
widely adopted way to realize Negative Capacitance (NC) FET. In a general TCAD …
widely adopted way to realize Negative Capacitance (NC) FET. In a general TCAD …
Negative capacitance FET based energy efficient and DPA attack resilient ultra-light weight block cipher design
Energy-efficient and secure cipher design for resource constrained IoT applications is a
pressing challenge with CMOS technology scaling and increased hardware attacks. This …
pressing challenge with CMOS technology scaling and increased hardware attacks. This …
Analog/RF and linearity performance assessment of a negative capacitance FinFET using high threshold voltage techniques
The continued exploration of the ferroelectric-based negative capacitance field effect
transistor (NCFET) for energy-efficient and higher current drivability merits has called for an …
transistor (NCFET) for energy-efficient and higher current drivability merits has called for an …
Demonstration of improved short channel performance metrics for ferroelectric concentric negative capacitance FinFET
Using well-calibrated TCAD models, we have exhibited the application of both Dielectric
(DE) and Ferroelectric (FE) materials as spacers in Negative Capacitance (NC) FinFET. We …
(DE) and Ferroelectric (FE) materials as spacers in Negative Capacitance (NC) FinFET. We …
Impact of random spatial fluctuation in non-uniform crystalline phases on multidomain MFIM capacitor and negative capacitance FDSOI
In this work, we explain the phenomena of ferroelectricity modulation in the ferroelectric (FE)
layer due to the residing dielectric (DE) phase. This work also demonstrates the impact of …
layer due to the residing dielectric (DE) phase. This work also demonstrates the impact of …
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias
In this article, a variant of doped HfO 2 based ferroelectric capacitor ie silicon doped HfO 2
(hafnia-silica/HSO) is investigated for analytical feasibility and viability for negative …
(hafnia-silica/HSO) is investigated for analytical feasibility and viability for negative …
Noise Analysis in FinFET-based Analog Circuit with Technology Scaling
Noise in any circuit determines the minimum acceptable signal level that can process
without compromising its functionality. In field-effect transistors (FETs), mainly two types of …
without compromising its functionality. In field-effect transistors (FETs), mainly two types of …
Design and security evaluation of negative capacitance FETs for energy efficient and DPA attack resilient PRSENT-80 block cipher design at scaled VDD
Negative capacitance Field Effect Transistor (NCFET) is a promising CMOS compatible
technology that exhibits relatively lower subthreshold swing (SS) and higher ON current at …
technology that exhibits relatively lower subthreshold swing (SS) and higher ON current at …
Unveiling the Impact of Interface Traps Induced on Negative Capacitance Nanosheet FET: A Reliability Perspective
Reliability and yield are major concerns of nano-scaled devices. Bias temperature instability
(BTI) has always been one of the major reliability issue for the semiconductor transistors. BTI …
(BTI) has always been one of the major reliability issue for the semiconductor transistors. BTI …