A qualitative approach using room-temperature confocal microscopy is employed to
investigate the spatial distribution of shallow and deep oxygen vacancy (VO) concentrations …

Abstract Effect of spin polarization on the electronic and thermoelectric properties of double
pervoskites La 2 NiMnO 6 and La 2 CoMnO 6 are studied using the full-potential linearized …

In this article, a simple, low cost and combined surface treatment method [pre-oxidation
immersion of the p-type silicon (Si) substrate in hydrogen peroxide (H 2 O 2) and post …

Metal–insulator–semiconductor (MIS) is an essential structure in semiconductor devices.
Owing to the increasingly complex development of semiconductor devices, the local …

We report on frequency-dependent contrast in d (S 11)/dV measurements of a variably
doped p-type silicon sample in the frequency range from 2 GHz to 18 GHz. The …

The trap parameters of defects in Si/CaF 2 multilayered structures were determined from the
analysis of optical charging spectroscopy measurements. Two kinds of maxima were …

We propose a new technique called local deep level transient spectroscopy (local-DLTS),
which utilizes scanning nonlinear dielectric microscopy to analyze oxide/semiconductor …

Conductive atomic force microscopy (C-AFM) and scanning capacitance microscopy (SCM)
are used in this work to characterize trap creation and charge trap** in ultra-thin SiO2. It is …

We use first-principles full-potential method to study the structural and electronic properties
of the ferromagnetic (FM) and antiferromagnetic (AF) ordering in the PbS-based ternary …

The chalcogenides of alkaline earth metals are technologically important materials, having
potential applications in catalysis, microelectronic, optoelectronic, and luminescent devices …