Hard x-ray photoelectron spectroscopy: a snapshot of the state-of-the-art in 2020

C Kalha, NK Fernando, P Bhatt… - Journal of Physics …, 2021 - iopscience.iop.org
Hard x-ray photoelectron spectroscopy (HAXPES) is establishing itself as an essential
technique for the characterisation of materials. The number of specialised photoelectron …

Hard X-ray photoemission spectroscopy

K Kobayashi - Nuclear Instruments and Methods in Physics Research …, 2009 - Elsevier
Except in the very early stage of the development of X-ray photoemission spectroscopy
(XPS) by Kai Siegbahn and his coworkers, the excitation sources for XPS studies have …

Profiling the Interface Electron Gas of Heterostructures <?format ?>with Hard X-Ray Photoelectron Spectroscopy

M Sing, G Berner, K Goß, A Müller, A Ruff… - Physical Review Letters, 2009 - APS
The conducting interface of LaAlO 3/SrTiO 3 heterostructures has been studied by hard x-ray
photoelectron spectroscopy. From the Ti 2 p signal and its angle dependence we derive that …

Electronic structure of and Sn-doped by hard x-ray photoemission spectroscopy

C Körber, V Krishnakumar, A Klein, G Panaccione… - Physical Review B …, 2010 - APS
The valence and core levels of In 2 O 3 and Sn-doped In 2 O 3 have been studied by hard x-
ray photoemission spectroscopy (h ν= 6000 eV) and by conventional Al K α (h ν= 1486.6 eV) …

Hole-induced insulator-to-metal transition in epitaxial films

KHL Zhang, Y Du, PV Sushko, ME Bowden… - Physical Review B, 2015 - APS
We have investigated the evolution of the electronic properties of L a 1− x S rx Cr O 3 (0≤
x≤ 1) epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x …

BL09XU: an advanced hard X-ray photoelectron spectroscopy beamline of SPring-8

A Yasui, Y Takagi, T Osaka, Y Senba… - Synchrotron …, 2023 - journals.iucr.org
The BL09XU beamline of SPring-8 has been reorganized into a beamline dedicated for hard
X-ray photoelectron spectroscopy (HAXPES) to provide advanced capabilities with …

Role and Optimization of the Active Oxide Layer in TiO2‐Based RRAM

A Regoutz, I Gupta, A Serb, A Khiat… - Advanced Functional …, 2016 - Wiley Online Library
TiO2 is commonly used as the active switching layer in resistive random access memory.
The electrical characteristics of these devices are directly related to the fundamental …

Angle, spin, and depth resolved photoelectron spectroscopy on quantum materials

PDC King, S Picozzi, RG Egdell… - Chemical …, 2020 - ACS Publications
The role of X-ray based electron spectroscopies in determining chemical, electronic, and
magnetic properties of solids has been well-known for several decades. A powerful …

Coherent Peaks and Minimal Probing Depth in Photoemission Spectroscopy<? format?> of Mott-Hubbard Systems

G Panaccione, M Altarelli, A Fondacaro, A Georges… - Physical review …, 2006 - APS
We have measured hard x-ray photoemission spectra of pure vanadium sesquioxide (V 2 O
3) across its metal-insulator transition. We show that, in the metallic phase, a clear …

Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO2(001) Anatase Thin Films

B Gobaut, P Orgiani, A Sambri… - … Applied Materials & …, 2017 - ACS Publications
We report the study of anatase TiO2 (001)-oriented thin films grown by pulsed laser
deposition on LaAlO3 (001). A combination of in situ and ex situ methods has been used to …