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The RFET—A reconfigurable nanowire transistor and its application to novel electronic circuits and systems
With CMOS scaling reaching physical limits in the next decade, new approaches are
required to enhance the functionality of electronic systems. Reconfigurability on the device …
required to enhance the functionality of electronic systems. Reconfigurability on the device …
Reconfigurable nanowire electronics–a review
Reconfigurable nanowire transistors merge the electrical properties of unipolar n-and p-type
FETs into a single type of device with identic technology, geometry and composition. These …
FETs into a single type of device with identic technology, geometry and composition. These …
Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETs
We fabricated and characterized new ambipolar silicon nanowire (SiNW) FET transistors
featuring two independent gate-all-around electrodes and vertically stacked SiNW channels …
featuring two independent gate-all-around electrodes and vertically stacked SiNW channels …
Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors
A do**-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is
proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by …
proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by …
Designing efficient circuits based on runtime-reconfigurable field-effect transistors
An early evaluation in terms of circuit design is essential in order to assess the feasibility and
practicability aspects for emerging nanotechnologies. Reconfigurable nanotechnologies …
practicability aspects for emerging nanotechnologies. Reconfigurable nanotechnologies …
High-performance ternary adder using CNTFET
Ternary logic is a promising alternative to the conventional binary logic in VLSI design as it
provides the advantages of reduced interconnects, higher operating speeds, and smaller …
provides the advantages of reduced interconnects, higher operating speeds, and smaller …
Enabling energy efficiency and polarity control in germanium nanowire transistors by individually gated nanojunctions
Germanium is a promising material for future very large scale integration transistors, due to
its superior hole mobility. However, germanium-based devices typically suffer from high …
its superior hole mobility. However, germanium-based devices typically suffer from high …
Functionality-enhanced logic gate design enabled by symmetrical reconfigurable silicon nanowire transistors
Reconfigurable silicon nanowire field-effect transistors (RFETs) combine the functionality of
classical unipolar p-type and n-type FETs in one universal device. In this paper, we show …
classical unipolar p-type and n-type FETs in one universal device. In this paper, we show …
Top–down fabrication of gate-all-around vertically stacked silicon nanowire FETs with controllable polarity
As the current MOSFET scaling trend is facing strong limitations, technologies exploiting
novel degrees of freedom at physical and architecture level are promising candidates to …
novel degrees of freedom at physical and architecture level are promising candidates to …
Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors
Research in the field of electronics of 1D group-IV semiconductor structures has attracted
increasing attention over the past 15 years. The exceptional combination of the unique 1D …
increasing attention over the past 15 years. The exceptional combination of the unique 1D …