A 3-D TCAD framework for NBTI—Part I: Implementation details and FinFET channel material impact
The time kinetics of interface trap generation and passivation (ΔN IT) and its contribution (ΔV
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern …
The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Comparative characterization of NWFET and FinFET transistor structures using TCAD modeling
KO Petrosyants, DS Silkin, DA Popov - Micromachines, 2022 - mdpi.com
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried
out. The electrical and thermal performances in two device structures were analyzed based …
out. The electrical and thermal performances in two device structures were analyzed based …
New insight into negative bias temperature instability degradation during self-heating in nanoscale bulk FinFETs
D Son, K Hong, H Shim, S Pae… - IEEE Electron Device …, 2019 - ieeexplore.ieee.org
In this letter, we investigate the threshold voltage shift (ΔV th) by negative bias temperature
instability (NBTI) coupled with the self-heating effect (SHE) in a 14-nm bulk p-FinFET. To …
instability (NBTI) coupled with the self-heating effect (SHE) in a 14-nm bulk p-FinFET. To …
Impact of self-heating on performance and reliability in FinFET and GAAFET designs
Modern transistors such as FinFETs and gate-all-around FETs (GAAFETs) suffer from
excessive heat confinement due to their small size and three-dimensional geometries, with …
excessive heat confinement due to their small size and three-dimensional geometries, with …
A predictive model for IC self-heating based on effective medium and image charge theories and its implications for interconnect and transistor reliability
Spatially resolved precise prediction of local temperature T (x, y, z) is essential to evaluate
Arrhenius-activated interconnect (eg, electromigration) and transistor reliability (eg, NBTI …
Arrhenius-activated interconnect (eg, electromigration) and transistor reliability (eg, NBTI …
Modeling channel length scaling impact on NBTI in RMG Si p-FinFETs
Negative Bias Temperature Instability (NBTI) stress and recovery time kinetics from
Replacement Metal Gate (RMG) High-K Metal Gate (HKMG) p-channel FinFETs are …
Replacement Metal Gate (RMG) High-K Metal Gate (HKMG) p-channel FinFETs are …
Modeling of process (Ge, N) dependence and mechanical strain impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs
A physical framework is used to model time kinetics of Negative Bias Temperature Instability
(NBTI) in Si and SiGe FDSOI p-MOSFETs and p-FinFETs. The effects of Germanium (Ge%) …
(NBTI) in Si and SiGe FDSOI p-MOSFETs and p-FinFETs. The effects of Germanium (Ge%) …
Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials
A 3-D TCAD framework is proposed for simulating Negative Bias Temperature Instability
(NBTI) in Silicon (Si) and Silicon Germanium (SiGe) channel p-MOSFETs. Different types of …
(NBTI) in Silicon (Si) and Silicon Germanium (SiGe) channel p-MOSFETs. Different types of …
Aggravated NBTI reliability due to hard-to-detect open defects
G Aguirre, J Gamez, V Champac - Microelectronics Reliability, 2024 - Elsevier
FinFET technology has become an attractive candidate for high-performance and power-
efficient applications. In the other hand, the behavior of FinFET devices is influenced by self …
efficient applications. In the other hand, the behavior of FinFET devices is influenced by self …