VLS growth of pure and Au decorated β-Ga2O3 nanowires for room temperature CO gas sensor and resistive memory applications
TF Weng, MS Ho, C Sivakumar, B Balraj… - Applied Surface …, 2020 - Elsevier
High-density single crystalline β-Ga 2 O 3 nanowires on silicon (1 0 0) substrates were
grown by vapour-liquid-solid growth method. We have characterized the pure β-Ga 2 O 3 …
grown by vapour-liquid-solid growth method. We have characterized the pure β-Ga 2 O 3 …
Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles
Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles
(TaN-NPs) and sandwiched between Al-doped HfO 2 layers to achieve ITO/HfAlO/TaN …
(TaN-NPs) and sandwiched between Al-doped HfO 2 layers to achieve ITO/HfAlO/TaN …
Intensive harmonized synapses with amorphous Cu 2 O-based memristors using ultrafine Cu nanoparticle sublayers formed via atomically controlled electrochemical …
Resistive random-access memory (RRAM) devices have significant advantages for
neuromorphic computing but have fatal problems of uncontrollability and abrupt resistive …
neuromorphic computing but have fatal problems of uncontrollability and abrupt resistive …
Toward controlling filament size and location for resistive switches via nanoparticle exsolution at oxide interfaces
Memristive devices are among the most prominent candidates for future computer memory
storage and neuromorphic computing. Though promising, the major hurdle for their …
storage and neuromorphic computing. Though promising, the major hurdle for their …
Synaptic plasticity and quantized conductance states in TiN-Nanoparticles-Based memristor for neuromorphic system
Controlled conductive filament formation in the resistive random access memory device is
an essential requirement for analog resistive switching to develop artificial synapses. In this …
an essential requirement for analog resistive switching to develop artificial synapses. In this …
Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices
The incorporation of a TaO y layer in a HfO x/TaO y/HfO x resistive switching memory stack
results in low-power (~ nW in pulsing mode) and forming-free operation. With this material …
results in low-power (~ nW in pulsing mode) and forming-free operation. With this material …
Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles
Abstract ITO/HfAlO/Pt-NP/HfAlO/ITO RRAM device was fabricated with atomic layer
deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed …
deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed …
Dual-Function Device Fabricated Using One Single SiO2 Resistive Switching Layer
WC Jhang, CC Hsu - IEEE Electron Device Letters, 2022 - ieeexplore.ieee.org
In this letter, a high-performance dual-function device fabricated using one single SiO 2
resistive switching layer is demonstrated. The SiO 2 layer is sandwiched between Ag and n+ …
resistive switching layer is demonstrated. The SiO 2 layer is sandwiched between Ag and n+ …
Optimized chalcogenide medium for inherently activated resistive switching device
The suitability of thin films of the chalcogenide germanium telluride (GeTe x) with various
chemical compositions for use as an active medium in a conductive bridge resistive …
chemical compositions for use as an active medium in a conductive bridge resistive …
Reproducible Non-Volatile Multi-State Storage and Emulation of Synaptic Plasticity Based on a Copper-Nanoparticle-Embedded HfOx/ZnO Bilayer with Ultralow …
S Chen, H Chen, Y Lai - Nanomaterials, 2022 - mdpi.com
The multilevel properties of a memristor are significant for applications in non-volatile multi-
state storage and electronic synapses. However, the reproducibility and stability of the …
state storage and electronic synapses. However, the reproducibility and stability of the …