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Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities
The recent demonstration of ferroelectricity in nitride materials has enabled a broad
spectrum of applications across electronics, optoelectronics, photovoltaics, photonics …
spectrum of applications across electronics, optoelectronics, photovoltaics, photonics …
Understanding interfaces in AlScN/GaN heterostructures
Aluminum scandium nitride barrier layers increase the available sheet charge carrier density
in gallium nitride‐based high‐electron‐mobility transistors and boost the output power of …
in gallium nitride‐based high‐electron‐mobility transistors and boost the output power of …
[HTML][HTML] Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices
Wurtzite Sc x Al 1− x N/GaN (x= 0.13–0.18) multi-quantum wells grown by molecular beam
epitaxy on c-plane GaN are found to exhibit remarkably strong and narrow near-infrared …
epitaxy on c-plane GaN are found to exhibit remarkably strong and narrow near-infrared …
Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures
Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …
[HTML][HTML] Voltage-margin limiting mechanisms of AlScN-based HEMTs
In this work, the off-state characteristics of AlScN/GaN high electron mobility transistors
(HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and …
(HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and …
[HTML][HTML] Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions
Sc 0.18 Al 0.82 N/GaN with state-of-the-art x-ray diffraction figures of merit grown by metal
modulated epitaxy under metal-rich conditions and a low substrate temperature of 400 C is …
modulated epitaxy under metal-rich conditions and a low substrate temperature of 400 C is …
Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0. 2Al0. 45Ga0. 35N
In this study, we demonstrate ferroelectricity in high-quality monocrystalline quaternary alloy
ScAlGaN. Sc 0.2 Al 0.45 Ga 0.35 N films are grown by plasma-assisted molecular beam …
ScAlGaN. Sc 0.2 Al 0.45 Ga 0.35 N films are grown by plasma-assisted molecular beam …
Scandium-III-nitrides: A New Material Platform for Semiconductor Photocatalysts with High Reducing Power
Semiconductor nanowires have become emerging photocatalysts in artificial photosynthesis
processes for solar fuel production. For reduction reactions, semiconductor photocatalysts …
processes for solar fuel production. For reduction reactions, semiconductor photocatalysts …
Unprecedented enhancement of piezoelectricity in wurtzite nitride semiconductors via thermal annealing
The incorporation of rare-earth elements in wurtzite nitride semiconductors, eg, scandium
alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses …
alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses …
Molecular Beam Epitaxial Growth and Characterization of Nanoscale ScGaN
Low-dimensional semiconductor materials, including nanowires, have been an attractive
platform for cutting-edge semiconductor device development. On the other hand, scandium …
platform for cutting-edge semiconductor device development. On the other hand, scandium …