Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …

The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …

This paper presents a novel approach and techniques for physics-based electromigration
(EM) assessment in power delivery networks of very large scale integration systems. An …

Electromigration (EM) in very large scale integration (VLSI) interconnects has become one
of the major reliability issues for current and future VLSI technologies. However, existing EM …

Electromigration (EM)-induced voiding is an important reliability concern in modern
integrated circuits. Resistance degradation in interconnect metal lines caused by voiding …

In this paper, we present a novel and fast electromigration (EM) immortality check for
general multisegment interconnect wires. Instead of using current density as the key …

Electromigration (EM) is a major concern for very large-scale integration (VLSI) interconnect
reliability, particularly for interconnect trees with multibranch metal wires representing …

As VLSI technology features are pushed to the limit with every generation and with the
introduction of new materials and increased current densities to satisfy the performance …

Electromigration (EM) in VLSI chips has become a major reliability issues in nanometer VLSI
design. Traditional compact EM models cannot give accurate predictions about the stress …

Electromigration (EM) is one of the major concerns in the reliability analysis of very large-
scale integration (VLSI) systems due to the continuous technology scaling. Accurately …