A review of selected topics in physics based modeling for tunnel field-effect transistors
The research field on tunnel-FETs (TFETs) has been rapidly develo** in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications
Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
Performance assessment of the charge-plasma-based cylindrical GAA vertical nanowire TFET with impact of interface trap charges
In this article, a charge-plasma (CP)-based gate-all-around (GAA) silicon vertical nanowire
tunnel field-effect transistor (NWTFET) is proposed. The effects of interface trap charges …
tunnel field-effect transistor (NWTFET) is proposed. The effects of interface trap charges …
A journey from bulk MOSFET to 3 nm and beyond
To overcome scaling issues such as controlling gate leakage, drain induced barrier
lowering, higher subthreshold conduction, polysilicon gate depletion, and other short …
lowering, higher subthreshold conduction, polysilicon gate depletion, and other short …
Drain current modelling of asymmetric junctionless dual material double gate MOSFET with high K gate stack for analog and RF performance
This paper presents the continuous 2D analytical modelling of electrostatic potential,
threshold voltage (V th), subthreshold swing, drain induced barrier lowering (DIBL) and …
threshold voltage (V th), subthreshold swing, drain induced barrier lowering (DIBL) and …
[HTML][HTML] Impact of deep cryogenic temperatures on gate stack dual material DG MOSFET performance: analog and RF analysis
By understanding the potential benefits of Gate Stack Dual Material double gate MOSFET
(DG MOSFET), this research aims to contribute to the investigation of its electrical …
(DG MOSFET), this research aims to contribute to the investigation of its electrical …
Investigation of temperature for the stacked Ferroelectric Heterojunction TFET (Fe-HTFET) on box substrate
The comprehensive numerical simulation analysis on temperature effects for ferroelectric
TFET is proposed in this work. This research demonstrates detailed simulation-based …
TFET is proposed in this work. This research demonstrates detailed simulation-based …
Design and investigation of field plate-based vertical GAA–β-(AlGa) 2O3/Ga2O3 high electron mobility transistor
In this work, a novel Gate-all-around β-(AlGa) 2 O 3/Ga 2 O 3 HEMT device with Al 2 O 3 as
a passivation layer using gate connected field plate technique has been proposed …
a passivation layer using gate connected field plate technique has been proposed …
Performance investigation of elevated source EBG TFET based photosensor for near-infrared light sensing applications
In this manuscript, an elevated source TFET with extended back gate (ES-EBG-TFET) based
photosensor is designed to offer improvement in optical performance for detecting incident …
photosensor is designed to offer improvement in optical performance for detecting incident …
Design and analysis of dual-gate misalignment on the performance of do**less tunnel field effect transistor
The submitted work presents a designed and analyzed do**less double-gate tunnel field
effect transistor. In the designed do**less structure, do** is introduced by charge …
effect transistor. In the designed do**less structure, do** is introduced by charge …