Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation
nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition …

We investigate the blocking layer formation of the trimethoxypropylsilane small molecule
inhibitor (SMI), its blocking mechanisms, and all relevant blocking layer disintegration …

Enhancing the performance of thermoelectric materials remains critical for practical
applications. Increasing the power factor and reducing the thermal conductivity are key …

Zinc oxide (ZnO) is a transparent wide band gap semiconductor material with various
possible applications in form of thin films. Most previous studies on atomic layer deposition …

Atomic layer deposition (ALD) is a thin film deposition technique based on self-saturated
reactions between a precursor and reactant vacuum conditions. A typical ALD reaction …

For the future scaling of 3D cross-point (X-point) memory, it is necessary to implement
atomic layer deposition (ALD) of chalcogenides for ovonic threshold switch (OTS) …

We have examined the atomic layer deposition (ALD) of Al2O3 using TMA as the precursor
and t-BuOH and H2O as the co-reactants, focusing on the effects of the latter on both the …

Atomic layer deposition (ALD) and molecular layer deposition (MLD) are key techniques
used to fabricate high-quality thin films. Organic α, ω-bifunctional precursors often exhibit …

The surface reaction of a heteroleptic precursor in the atomic layer deposition (ALD) of ZrO 2
has been investigated using atomically thin films for scaled-down semiconductor devices …

Controlling the formation of interfacial layers in dynamic random-access memory (DRAM)
capacitors is crucial because it affects electrical performance, such as increasing the …