This paper reviews the advantages of SiGe BiCMOS technologies and their applications in
the millimeterwave to terahertz domains. The state-of-the-art covering both the Si/SiGe HBTs …

This paper reviews recent developments in process technology of high-speed SiGe HBTs at
IHP. Two device concepts, one with selective epitaxial growth and one with non-selective …

A SiGe HBT technology featuring f T/f max/BV CEO= 300GHz/500GHz/1.6 V and a minimum
CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to …

This paper addresses the integration of a new generation of high-speed SiGe HBTs with f T/f
max of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm …

This paper describes a multi-purpose radar system suitable for applications with different
requirements on dynamic range, resolution, and miniaturization degree. It utilizes a scalable …

A 325-GHz× 18 frequency multiplier chain implemented in af τ/f max= 250 GHz/380 GHz
evaluation SiGe heterojunction bipolar transistor technology is presented. The chain …

Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …

Monolithically integrated 220-and 320-GHz receiver front-ends manufactured in an
engineering version of an f T/f max= 280/435-GHz SiGe technology are presented …

The design methodology and circuit implementation of a transimpedance (TI) amplifier (TIA)
featuring low averaged input-referred current noise density without compromising the TIA …

In the last few years automotive radar has been transformed from being a niche sensor to
becoming standard even in middle-class cars. With Euro-NCAP ratings now requiring …