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Integrated lasers on silicon at communication wavelength: a progress review
With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …
has been developed and applied for high‐bandwidth data transmission. Contributed by the …
Germanium-based integrated photonics from near-to mid-infrared applications
Germanium (Ge) has played a key role in silicon photonics as an enabling material for
datacom applications. Indeed, the unique properties of Ge have been leveraged to develop …
datacom applications. Indeed, the unique properties of Ge have been leveraged to develop …
Si-based GeSn photodetectors toward mid-infrared imaging applications
The GeSn detector offers high-performance Si-based infrared photodetectors with
complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we …
complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we …
Electrically injected GeSn lasers on Si operating up to 100 K
Monolithic lasers on Si have long been anticipated as an enabler of full photonic integration,
and significant progress in GeSn material development shows promise for such laser …
and significant progress in GeSn material development shows promise for such laser …
GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain
Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …
Lasing in strained germanium microbridges
Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …
Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si
Lasing from direct bandgap group-IV GeSn alloys has opened a new venue for the
development of Si-based monolithic laser. In this work, we demonstrate optically pumped …
development of Si-based monolithic laser. In this work, we demonstrate optically pumped …
[HTML][HTML] Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
Advanced evanescent-wave optical biosensors for the detection of nucleic acids: An analytic perspective
Evanescent-wave optical biosensors have become an attractive alternative for the screening
of nucleic acids in the clinical context. They possess highly sensitive transducers able to …
of nucleic acids in the clinical context. They possess highly sensitive transducers able to …