Integrated lasers on silicon at communication wavelength: a progress review

N Li, G Chen, DKT Ng, LW Lim, J Xue… - Advanced Optical …, 2022 - Wiley Online Library
With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …

Germanium-based integrated photonics from near-to mid-infrared applications

D Marris-Morini, V Vakarin, JM Ramirez, Q Liu… - …, 2018 - degruyter.com
Germanium (Ge) has played a key role in silicon photonics as an enabling material for
datacom applications. Indeed, the unique properties of Ge have been leveraged to develop …

Si-based GeSn photodetectors toward mid-infrared imaging applications

H Tran, T Pham, J Margetis, Y Zhou, W Dou… - Acs …, 2019 - ACS Publications
The GeSn detector offers high-performance Si-based infrared photodetectors with
complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we …

Electrically injected GeSn lasers on Si operating up to 100 K

Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant… - Optica, 2020 - opg.optica.org
Monolithic lasers on Si have long been anticipated as an enabler of full photonic integration,
and significant progress in GeSn material development shows promise for such laser …

GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain

J Chrétien, N Pauc, F Armand Pilon, M Bertrand… - ACS …, 2019 - ACS Publications
Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …

Lasing in strained germanium microbridges

FT Armand Pilon, A Lyasota, YM Niquet… - Nature …, 2019 - nature.com
Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …

Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si

Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri… - Acs …, 2019 - ACS Publications
Lasing from direct bandgap group-IV GeSn alloys has opened a new venue for the
development of Si-based monolithic laser. In this work, we demonstrate optically pumped …

[HTML][HTML] Review of Si-based GeSn CVD growth and optoelectronic applications

Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth

W Dou, M Benamara, A Mosleh, J Margetis, P Grant… - Scientific reports, 2018 - nature.com
Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …

Advanced evanescent-wave optical biosensors for the detection of nucleic acids: An analytic perspective

CS Huertas, O Calvo-Lozano, A Mitchell… - Frontiers in …, 2019 - frontiersin.org
Evanescent-wave optical biosensors have become an attractive alternative for the screening
of nucleic acids in the clinical context. They possess highly sensitive transducers able to …