Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …

After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of
diminishing returns. The use of new semiconductor channel materials with improved …

GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors
and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor …

Selective area growth by metal organic vapor phase epitaxy of III/V nano ridges on patterned
(001) Si substrates was investigated applying different growth conditions. The deposition of …

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …

This paper reports on gate-all-around silicon nanowire field-effect transistors (FETs) built in
a lateral configuration, which represent the ultimate scaling limit of triple-gate finFET devices …

In this article, we investigate the electrical properties of In 0.53 Ga 0.47 As gate-all-around
(GAA) MOSFETs with different nanowire shapes. InGaAs GAA MOSFETs with trapezoid and …