Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
TJ Yang, R Shivaraman, JS Speck… - Journal of Applied Physics, 2014 - pubs.aip.org
In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN
quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN …
quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN …
On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
J Piprek, F Römer, B Witzigmann - Applied Physics Letters, 2015 - pubs.aip.org
III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with
increasing injection current (droop). Auger recombination is often seen as primary cause of …
increasing injection current (droop). Auger recombination is often seen as primary cause of …
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes
In a combined experimental and numerical investigation, we present the effects of trap‐
assisted tunneling on the sub‐threshold forward bias characteristics of a blue InGaN/GaN …
assisted tunneling on the sub‐threshold forward bias characteristics of a blue InGaN/GaN …
Role of defects in the thermal droop of InGaN-based light emitting diodes
This paper reports an investigation of the physical origin of the thermal droop (the drop of the
optical power at high temperatures) in InGaN-based light-emitting diodes. We critically …
optical power at high temperatures) in InGaN-based light-emitting diodes. We critically …
Progress and challenges in electrically pumped GaN-based VCSELs
ABSTRACT The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical
source in short-distance optical communication links, computer mice and tailored infrared …
source in short-distance optical communication links, computer mice and tailored infrared …
VENUS: A vertical-cavity surface-emitting laser electro-opto-thermal numerical simulator
The properties of vertical-cavity surface-emitting lasers (VCSELs) are investigated by means
of a multiphysical Vcsel Electro-opto-thermal NUmerical Simulator (VENUS). VENUS …
of a multiphysical Vcsel Electro-opto-thermal NUmerical Simulator (VENUS). VENUS …
Multiscale approaches for the simulation of InGaN/GaN LEDs
M Auf der Maur - Journal of Computational Electronics, 2015 - Springer
In this work we review basic aspects of multiscale approaches for combining atomistic with
continuous media descriptions and quantum mechanical with semiclassical drift–diffusion …
continuous media descriptions and quantum mechanical with semiclassical drift–diffusion …
Reduced dimensionality multiphysics model for efficient VCSEL optimization
The ICT scene is dominated by short-range intra-datacenter interconnects and networking,
requiring high speed and stable operations at high temperatures. GaAs/AlGaAs vertical …
requiring high speed and stable operations at high temperatures. GaAs/AlGaAs vertical …
[HTML][HTML] Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective
Recent experiments of electron emission spectroscopy (EES) on III-nitride light-emitting
diodes (LEDs) have shown a correlation between droop onset and hot electron emission at …
diodes (LEDs) have shown a correlation between droop onset and hot electron emission at …