Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
Stability and reliability of lateral GaN power field-effect transistors
JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
Analysis of DC–RF dispersion in AlGaN/GaN HFETs using RF waveform engineering
This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN
heterojunction field-effect transistors when the devices are driven into different RF load …
heterojunction field-effect transistors when the devices are driven into different RF load …
Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT
I Nifa, C Leroux, A Torres, M Charles… - Microelectronic …, 2019 - Elsevier
We present a detailed study of the process influence on two-dimensional electron gas
(2DEG) transport properties in Al 0.25 Ga 0.75 N/AlN/GaN heterostructure. Hall effect …
(2DEG) transport properties in Al 0.25 Ga 0.75 N/AlN/GaN heterostructure. Hall effect …
Study of charge trap** effects on AlGaN/GaN HEMTs under UV illumination with pulsed IV measurement
V Nagarajan, KM Chen, BY Chen… - … on Device and …, 2020 - ieeexplore.ieee.org
The charge trap** effects on AlGaN/GaN HEMTs under UV illumination are investigated
using the pulsed current-voltage (IV) measurement method. The test samples are …
using the pulsed current-voltage (IV) measurement method. The test samples are …
Study of AlGaN/GaN vertical superjunction HEMT for improvement of breakdown voltage and specific on-resistance
M Zhang, Z Guo, Y Huang, Y Li, J Ma, X **a… - IEEE …, 2021 - ieeexplore.ieee.org
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a
composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve …
composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve …
Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations
The existence of a correlation between current collapse and off-state reverse-bias leakage
current in heteroepitaxially grown AlGaN/GaN high-electron-mobility transistors is …
current in heteroepitaxially grown AlGaN/GaN high-electron-mobility transistors is …
Figures-of-merit of lateral GaN power devices: Modeling and comparison of HEMTs and PSJs
L Nela, C Erine, MV Oropallo… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
In this work, we propose a simple and yet accurate physical model to describe the figures-of-
merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is …
merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is …
Intrinsic polarization super junctions: Design of single and multichannel GaN structures
Super junctions (SJs) have enabled unprecedented performance in Silicon power devices,
which could be further improved by applying this concept to wide bandgap semiconductors …
which could be further improved by applying this concept to wide bandgap semiconductors …
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide
D Gregušová, R Stoklas, K Čičo… - Semiconductor …, 2007 - iopscience.iop.org
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOSHFETs)
with 4 nm thick Al 2 O 3 gate oxide were prepared and their performance was compared with …
with 4 nm thick Al 2 O 3 gate oxide were prepared and their performance was compared with …