Thermal transport and grain boundary conductance in ultrananocrystalline diamond thin films
Although diamond has the highest known room temperature thermal conductivity, k∼ 2200
W∕ m K, highly sp 3 amorphous carbon films have k< 15 W∕ m K. We carry out an …
W∕ m K, highly sp 3 amorphous carbon films have k< 15 W∕ m K. We carry out an …
Role of S∕ Se ratio in chemical bonding of As–S–Se glasses investigated by Raman, x-ray photoelectron, and extended x-ray absorption fine structure …
Chalcogenide glasses have attracted considerable attention and found various applications
due to their infrared transparency and other optical properties. The As–S–Se chalcogenide …
due to their infrared transparency and other optical properties. The As–S–Se chalcogenide …
Intermediate phase, network demixing, boson and floppy modes, and compositional trends in glass transition temperatures of binary system
The structure of binary As x S 1− x glasses is elucidated using modulated differential
scanning calorimetry, Raman scattering, IR reflectance, and molar volume experiments over …
scanning calorimetry, Raman scattering, IR reflectance, and molar volume experiments over …
Structural model of homogeneous As–S glasses derived from Raman spectroscopy and high-resolution XPS
The structure of homogeneous bulk As x S100− x (25≤ x≤ 42) glasses, prepared by the
conventional rocking–melting–quenching method, was investigated using high-resolution X …
conventional rocking–melting–quenching method, was investigated using high-resolution X …
Raman study of photoinduced crystallization of SnS2 in As2S3: Sn glasses
Raman spectra of synthesised As 2 S 3: Sn samples with up to 2.7 at% Sn recorded at a
moderate excitation power density (P exc= 4 kW/cm 2) show their amorphous character …
moderate excitation power density (P exc= 4 kW/cm 2) show their amorphous character …
[PDF][PDF] Photo-and thermally-induced diffusion and dissolution of Ag in chalcogenide glasses thin films
T Wagner - J. Optoelectron. Adv. Mater, 2002 - Citeseer
Optically-and thermally-induced diffusion and dissolution (OIDD) of metals such as Ag (Cu,
Zn) into amorphous As-S, As-Se, Ge-Se and Ge-S chalcogenide semiconductors has been …
Zn) into amorphous As-S, As-Se, Ge-Se and Ge-S chalcogenide semiconductors has been …
Crystallisation kinetics, glass forming ability and thermal stability in glassy Se100− xInx chalcogenide alloys
Differential scanning calorimetry (DSC) studies have been done under non-isothermal
conditions at different heating rates for glassy Se100− xInx (5≤ x≤ 20) alloys. DSC traces …
conditions at different heating rates for glassy Se100− xInx (5≤ x≤ 20) alloys. DSC traces …
Intermediate Phases, structural variance and network demixing in chalcogenides: The unusual case of group V sulfides
We review intermediate phases (IPs) in chalcogenide glasses and provide a structural
interpretation of these phases. In binary group IV selenides, IPs reside in the 2.40< r< 2.54 …
interpretation of these phases. In binary group IV selenides, IPs reside in the 2.40< r< 2.54 …
Properties of arsenic sulphide (β-As4S4) modified by mechanical activation
Arsenic sulphide β-As 4 S 4 has been modified by mechanical activation in a planetary ball
mill. As a consequence, the solid-state properties and dissolution yield have been …
mill. As a consequence, the solid-state properties and dissolution yield have been …
Raman scattering evidence on the correlation of middle range order and structural self-organization of As-S-Ge glasses in the intermediate phase region
The Raman scattering of bulk nonstoichiometric chalcogenide alloys along the pseudo-
binary AsS 3–GeS 4 tie-line, which completely lies in the intermediate phase (IP) region of …
binary AsS 3–GeS 4 tie-line, which completely lies in the intermediate phase (IP) region of …