K-PtCo/Al2O3 via ball milling as an efficient catalyst for preferential oxidation of CO towards hydrogen purification
Preferential oxidation of CO (PROX) is an effective process to cleanup CO in hydrogen for
proton exchange membrane fuel cells (PEMFCs). Prevailing catalysts face challenges, such …
proton exchange membrane fuel cells (PEMFCs). Prevailing catalysts face challenges, such …
A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation
Understanding the response and mechanism of semiconductor materials under irradiation
environment is important for some critical technological applications. In this work we …
environment is important for some critical technological applications. In this work we …
Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity
Optically transparent, electrically conductive n-Si/n-GaAs direct wafer bonds are achieved by
a thorough optimization of surface conditioning using fast atom beams. Bonding at room …
a thorough optimization of surface conditioning using fast atom beams. Bonding at room …
Degradation analysis of GaAs solar cells at thermal stress
N Papež, D Sobola, Ľ Škvarenina, P Škarvada… - Applied Surface …, 2018 - Elsevier
The work focuses on the study of structure stability and electrical parameters of photovoltaic
cells based on GaAs with Ge substrate. Solar cells of this type are used especially in …
cells based on GaAs with Ge substrate. Solar cells of this type are used especially in …
Machine learning-enhanced detection of minor radiation-induced defects in semiconductor materials using Raman spectroscopy
JY Chia, N Thamrongsiripak, S Thongphanit… - Journal of Applied …, 2024 - pubs.aip.org
Radiation damage in semiconductor materials is a crucial concern for electronic
applications, especially in the fields of space, military, nuclear, and medical electronics. With …
applications, especially in the fields of space, military, nuclear, and medical electronics. With …
Embedded nanofibers induced by high-energy ion irradiation of bulk GaSb
New embedded nanofiber layers were formed by irradiating a stationary GaSb sample with
1 Me Au ions at perpendicular incidence to ion fluences of 1× 10 14 ions cm-2 to 6× 10 15 …
1 Me Au ions at perpendicular incidence to ion fluences of 1× 10 14 ions cm-2 to 6× 10 15 …
Raman study of germanium nanowires formed by low energy Ag+ ion implantation
AV Pavlikov, AM Rogov, AM Sharafutdinova… - Vacuum, 2021 - Elsevier
Porous Ge layers of nanowires were formed by low energy (30 keV) Ag+ ion implantation of
crystalline c-Ge substrate. Different radiation doses resulted in the formation of nanowires …
crystalline c-Ge substrate. Different radiation doses resulted in the formation of nanowires …
Controlled III/V nanowire growth by selective-area vapor-phase epitaxy
We report on the growth of surface-bound, vertically oriented one-dimensional III/V
nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and-mismatched …
nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and-mismatched …
Laser ablation of GaAs in liquid: The role of laser pulse duration
The synthesis of gallium arsenide (GaAs) nanoparticles has attracted wide scientific and
technological interest due to the possibility of tuning the GaAs NP (nanoparticle) band gap …
technological interest due to the possibility of tuning the GaAs NP (nanoparticle) band gap …
Study of changes in surface composition and morphology of GaAs irradiated with different energies protons
X Liu, B Duan, H Xue, A Ejaz, T Wang - Nuclear Instruments and Methods …, 2025 - Elsevier
Gallium arsenide (GaAs) is a direct bandgap semiconductor material known for its excellent
radiation resistance. This study investigates the radiation effects on both intrinsic GaAs and …
radiation resistance. This study investigates the radiation effects on both intrinsic GaAs and …