We have investigated the exciton dynamics in transition metal dichalcogenide monolayers
using time-resolved photoluminescence experiments performed with optimized time …

The binding energy and the corresponding wave function of excitons in GaAs-based finite
square quantum wells (QWs) are calculated by the direct numerical solution of the three …

Energies of the ground and excited states of excitons in GaAs/AlGaAs and InGaAs/GaAs
finite square quantum wells (QWs) of various widths are calculated. This is achieved by …

We present an experimental and theoretical study of the lowest exciton states in a 30-nm
single GaAs quantum-well heterostructure in different electric fields. We found that the …

Spectroscopic studies of mechanically exfoliated monolayer MoT e 2 were performed over a
wide temperature range from 4.2 to 300 K. At a low temperature, the photoluminescence …

The linewidths and the energy shifts of the resonant states of the impurity electron in GaAs-
based quantum wells (QWs) with infinite barriers are calculated. The two-dimensional …

Resonance dielectric response of excitons is studied for the high-quality InGaAs/GaAs
heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW …

Atomically thin indium selenide (InSe) exhibits a sombrero-like valence band, leading to
distinctive excitonic behaviors. It is known that the indirect band gap of atomically thin InSe …

Optically inactive or dark excitons play an important role in exciton and polariton devices. On
one hand, they supply excitons to the light cone and feed the photoluminescence signal. On …

Optical spectroscopy of resonant reflection has been used for both experimental and
theoretical studies of the exciton-light interaction in wide, high-quality quantum-well …