A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution
We review the Raman thermography technique, which has been developed to determine the
temperature in and around the active area of semiconductor devices with submicron spatial …
temperature in and around the active area of semiconductor devices with submicron spatial …
Elimination of catastrophic optical mirror damage in continuous-wave high-power laser diodes using multi-section waveguides
One of the persistent obstacles for high-power laser diodes (LDs) has been the catastrophic
optical mirror damage (COMD), which limits the operating power level and lifetime of …
optical mirror damage (COMD), which limits the operating power level and lifetime of …
Reliability issues in GaN electronic devices
GaN‐based power amplifiers for RF, microwave, and millimeter‐wave applications are now
available in the market, and compact GaN‐based power converters are currently entering …
available in the market, and compact GaN‐based power converters are currently entering …
Facet cooling in high-power InGaAs/AlGaAs lasers
S Arslan, S Gündoğdu, A Demir… - IEEE Photonics …, 2018 - ieeexplore.ieee.org
Several factors limit the reliable output power of a semiconductor laser under CW operation,
such as carrier leakage, thermal effects, and catastrophic optical mirror damage (COMD) …
such as carrier leakage, thermal effects, and catastrophic optical mirror damage (COMD) …
Technological Approaches Addressing Reliable Output Power Limits in High Power Edge-Emitting Lasers
High-power edge-emitting lasers are essential in numerous applications due to their energy-
efficient lasing and compact size. However, their reliable output power is often limited by …
efficient lasing and compact size. However, their reliable output power is often limited by …
Narrow versus broad waveguide laser diodes: A comparative analysis of self-heating and reliability
Semiconductor Laser Diodes (LDs) generate high output powers with high power
conversion efficiencies. While broad-area LDs are favored for high-power applications …
conversion efficiencies. While broad-area LDs are favored for high-power applications …
Reduced facet temperature in semiconductor lasers using electrically pumped windows
A Demir, S Arslan, S Gündoğdu… - High-Power Diode Laser …, 2019 - spiedigitallibrary.org
The self-heating of semiconductor lasers contributes directly to facet heating and
consequently to the critical temperature for catastrophic optical mirror damage (COMD) but …
consequently to the critical temperature for catastrophic optical mirror damage (COMD) but …
Multisection waveguide method for facet temperature reduction and improved reliability of high-power laser diodes
Catastrophic optical mirror damage (COMD) limits the output power and reliability of lasers
diodes (LDs). Laser self heating together with facet absorption of output power cause the …
diodes (LDs). Laser self heating together with facet absorption of output power cause the …
Elimination of catastrophic optical mirror damage in high-power laser diodes using multi-section waveguides
K Ebadi - 2022 - search.proquest.com
One of the solid constraints of high-power laser diodes (LDs) has been catas-trophic optical
mirror damage (COMD), restricting the operating power level and lifetime of commercial high …
mirror damage (COMD), restricting the operating power level and lifetime of commercial high …
Distributed waveguide design for reducing thermal load in semiconductor high power lasers
OA Saadi - 2025 - repository.bilkent.edu.tr
Semiconductor lasers lead laser technology due to their high efficiency, compact size, and
cost-effectiveness. Among these, GaAs-based laser diodes (LDs) are the most efficient light …
cost-effectiveness. Among these, GaAs-based laser diodes (LDs) are the most efficient light …