Structural, electrical, magnetic transport and quantum transport properties of PbPdO2 thin films: Experimental and first-principles study
H Jia, L Zeng, X Zheng, H Lin, JM Zhang, Z Lin… - Applied Surface …, 2025 - Elsevier
The zero-band gap semiconductor PbPdO 2, with its distinctive energy band structure, holds
substantial promise for spintronic device applications. In this study, PbPdO 2 films with …
substantial promise for spintronic device applications. In this study, PbPdO 2 films with …
Reconfigurable diode effect and giant tunnel magnetoresistance ratio in magnetic tunnel junctions based on spin gapless semiconductor and half metallic Heusler …
Y Feng, H Chen, B Wu - Applied Surface Science, 2025 - Elsevier
To achieve current rectification in magnetic tunnel junctions (MTJs), two novel MTJs are
proposed in the present work by employing type-II spin gapless semiconductor FeCrTiAl as …
proposed in the present work by employing type-II spin gapless semiconductor FeCrTiAl as …
Tailoring Robust Quantum Anomalous Hall Effect via Entropy-Engineering
Development of quantum materials and tailoring of their functional properties is a
fundamental interest in materials science. Here we propose a new design concept for robust …
fundamental interest in materials science. Here we propose a new design concept for robust …
Comprehensive and Tensile Strains Effect on the Structural, Electronic, Magnetic, Elastic, Mechanical and Phonon Properties of Fevhfge Spin-Gapless Semiconductor …
Abstract n this work, the effect of the comprehensive and tensile strains as an external factor
were investigated on the spin-gapless semiconductor (SGS) FeVHfGe structural, electronic …
were investigated on the spin-gapless semiconductor (SGS) FeVHfGe structural, electronic …