Effects of al precursors on the characteristics of indium–aluminum oxide semiconductor grown by plasma-enhanced atomic layer deposition
S Lee, M Kim, G Mun, J Ko, HI Yeom… - … Applied Materials & …, 2021 - ACS Publications
Atomic layer deposition (ALD) has attracted much attention, particularly for applications in
nanoelectronics because of its atomic-level controllability and high-quality products. In this …
nanoelectronics because of its atomic-level controllability and high-quality products. In this …
Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for …
DG Kim, SH Choi, WB Lee, GM Jeong, J Koh… - Small …, 2024 - Wiley Online Library
Highly reliable atomic layer deposition (ALD)‐derived In‐Ga‐Zn‐O thin‐film transistors with
high field‐effect mobility (μFE) and hydrogen (H) resistivity are crucial for the semiconductor …
high field‐effect mobility (μFE) and hydrogen (H) resistivity are crucial for the semiconductor …
Highly stable Ba-addition InZnSnO channels of light emitting transistors and thin film transistors
CH Kim, YJ Park, JH Seo, HK Kim - Journal of Alloys and Compounds, 2022 - Elsevier
In this study, we investigate the characteristics of barium-addition indium-zinc-tin-oxide (B–
IZTO) channels fabricated by the co-sputtering of barium-tin-oxide and indium-zinc-tin-oxide …
IZTO) channels fabricated by the co-sputtering of barium-tin-oxide and indium-zinc-tin-oxide …
Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors
JH Park, HJ Seok, CH Kim, SH Jung… - Advanced Electronic …, 2021 - Wiley Online Library
The Hf‐doped indium zinc tin oxide (Hf: InZnSnO) channel for high performance and stable
transparent thin film transistors (TFTs) is developed by using a simultaneous cosputtering of …
transparent thin film transistors (TFTs) is developed by using a simultaneous cosputtering of …
Simultaneously defined semiconducting channel layer using electrohydrodynamic jet printing of a passivation layer for oxide thin-film transistors
A simple fabrication method for homojunction-structured Al-doped indium–tin oxide (ITO)
thin-film transistors (TFTs) using an electrohydrodynamic (EHD) jet-printed Al2O3 …
thin-film transistors (TFTs) using an electrohydrodynamic (EHD) jet-printed Al2O3 …
[HTML][HTML] Enhancement of electrical performance in indium-zinc oxide thin-film transistors with HfO2/Al2O3 gate insulator deposited via low-temperature ALD
SH Lee, SY Bak, CY Park, D Baek, M Yi - Displays, 2023 - Elsevier
Several studies have been conducted on amorphous oxide semiconductor (AOS) thin-film
transistors (TFTs) with the aim of applying them to the next-generation low-power displays …
transistors (TFTs) with the aim of applying them to the next-generation low-power displays …
Preparation and electrical characteristics of Li–N co-doped InZnAlO thin film transistors by radio frequency magnetron sputtering
W Yang, H Yang, J Su, X Zhang - Vacuum, 2022 - Elsevier
In this paper, amorphous Li–N co-doped InZnAlO (IZAO:(Li, N)) thin film transistors (TFTs)
with staggered bottom-gate structure were fabricated on SiO 2/Si substrates by radio …
with staggered bottom-gate structure were fabricated on SiO 2/Si substrates by radio …
Contact properties of a low-resistance aluminum-based electrode with metal cap** layers in vertical oxide thin-film transistors
Thin-film transistors (TFTs) with a small pitch size are necessary to realize high-resolution
displays for virtual reality and augmented reality applications. Particularly, electrodes require …
displays for virtual reality and augmented reality applications. Particularly, electrodes require …
Optimal aluminum do** method in PEALD for designing outstandingly stable InAlZnO TFT
Oxide semiconductors are promising semiconducting materials for next‐generation thin‐film
transistors (TFTs). The role of the cations should be considered in the design of oxide …
transistors (TFTs). The role of the cations should be considered in the design of oxide …
Effects of Atomic-Layer-Deposition temperature on the properties of Al2O3 insulators and InAlZnO Thin-Film-Transistors with Dual-Active-Layer structure
W Xu, G Zhang, X Feng - Applied Surface Science, 2022 - Elsevier
The influence of atomic layer deposition (ALD) temperature on the properties of Al 2 O 3
gate insulators and InAlZnO (IAZO) thin film transistors (TFTs) with a dual-active-layer …
gate insulators and InAlZnO (IAZO) thin film transistors (TFTs) with a dual-active-layer …