Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Multiscale modeling of do** processes in advanced semiconductor devices
The development of advanced semiconductor devices relies heavily on technology
computer-aided design. Front-end process simulators model the fabrication of devices …
computer-aided design. Front-end process simulators model the fabrication of devices …
Porosity as a function of stoichiometry and implantation temperature in Ge/Si1− xGex alloys
The development of porosity in single-crystal germanium and silicon-germanium alloys (c-Si
1− x Ge x) of (100) orientation was studied under bombardment with 140 keV Ge− ions over …
1− x Ge x) of (100) orientation was studied under bombardment with 140 keV Ge− ions over …
Substrate orientation dependence on the solid phase epitaxial growth rate of Ge
The solid phase epitaxial growth process has been studied at 330 C by transmission
electron microscopy for Ge wafers polished at 10–15 increments from the [001] to [011] …
electron microscopy for Ge wafers polished at 10–15 increments from the [001] to [011] …
RF plasma treatment of shallow ion-implanted layers of germanium
PN Okholin, VI Glotov, AN Nazarov… - Materials Science in …, 2016 - Elsevier
RF plasma annealing (RFPA) and rapid thermal annealing (RTA) of high-dose implanted n-
type and p-type amorphized Ge layers have been studied by Raman scattering …
type and p-type amorphized Ge layers have been studied by Raman scattering …
Regrowth of Ge with different degrees of damage under thermal and athermal treatment
In this report, the recrystallization of pre-damaged Ge samples is extensively investigated
under steady-state thermal annealing and ultrafast thermal spike-assisted annealing …
under steady-state thermal annealing and ultrafast thermal spike-assisted annealing …
Novel processing for access resistance reduction in Germanium devices
This paper reviews the experimental state-of-the-art in access resistance reduction in Ge
devices. Special attention is paid to the do** and thermal annealing state-of-the-art …
devices. Special attention is paid to the do** and thermal annealing state-of-the-art …
Processing of germanium for integrated circuits
In this review paper the authors will focus on Ge processing for integrated circuits. The key
areas that require the most attention are substrates and integration, gate dielectrics, and …
areas that require the most attention are substrates and integration, gate dielectrics, and …
[KNIHA][B] Phosphorus activation and diffusion in germanium
MA Razali - 2015 - search.proquest.com
Abstract Currently, the International Technology Roadmap for Semiconductors (ITRS) is
targeting the 22nm technology node in accordance with Moore's Law. The low mobility of …
targeting the 22nm technology node in accordance with Moore's Law. The low mobility of …
Modeling Two Dimensional Solid Phase Epitaxial Growth for Patterned Ge Substrates
Modeling the two-dimensional (2D) solid phase epitaxial growth (SPEG) of amorphized Ge
has become important due to the renewed interest in Ge as an alternative material in …
has become important due to the renewed interest in Ge as an alternative material in …
[KNIHA][B] Amorphization and solid phase epitaxial growth of germanium
BL Darby - 2012 - search.proquest.com
The substrate orientation dependence on SPEG was studied for the first time in Ge. The
velocity showed a strong dependence on substrate orientation and the [001] direction …
velocity showed a strong dependence on substrate orientation and the [001] direction …