The measurement of all three components of a magnetic field, simultaneously to high
precision with Hall sensors, remains a challenge. Given the high precision of state-of-the-art …

This paper reports the direct current and radio frequency characteristics of two-dimensional
hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) …

In the case of the fabrication of flexible solar cells based on the inverted metamorphic
multijunction (IMM) structure, the conventional high-temperature annealing will result in the …

X-ray absorption near edge spectroscopy (XANES) has been employed to investigate the
effect of Ge concentration on the diffusion of Ni in AuGe/Ni/AuGe stack, which is an Ohmic …

Abstract Ni/Ge/Ni/Au multi-layer metal electrodes were prepared on N-GaAs substrate by
electron-beam evaporation to investigate the effect of annealing process parameters on N …

Magnetic properties of alloyed Ohmic contacts of the type AuGe/Ni/Au on GaAs/AlGaAs
multilayers with n+ cap layer with different AuGe compositions and Ni-layer thicknesses are …

A process issue arising from the use of ferromagnetic Nickel in the AuGe/Ni/Au Ohmic
contact metallization is studied in the context of magnetic field sensors and HEMT devices …

The unresolved issue of magnetism of the alloyed AuGe/Ni/Au Ohmic contacts in GaAs is
investigated in the context of Hall magnetic field sensors. Magnetization measurements …

We propose a probe technique capable of performing local low-temperature spectroscopy
on a two-dimensional electron system (2DES) in a semiconductor heterostructure. Motivated …

To cool a high mobility two-dimensional electron gas (2DEG) at a GaAs–AlGaAs
heterojunction to milliKelvin temperatures, we have fabricated low resistance Ohmic …