Optical detection is of great significance in various fields such as industry, military, and
medical treatment, especially ultraviolet (UV) photodetectors. Moreover, as the demand for …

The ultrawide-band gap semiconductor Ga 2 O 3 as a photodetector heteroepitaxially grown
on Si is expected to be widely used for weak solar-blind signal detections because the …

The progressive downscaling of silicon‐based microelectronic devices delivers compact
and advanced integrated circuits for fast data processing and computing. Similarly, the …

Broadband photodetectors with a wide ultraviolet (UV)–visible (vis)–near‐infrared (NIR)
spectral response reduce cost and form factors in smart sensing systems by using one rather …

Dual-functional metal oxide semiconductors that can detect the values of two different
physical quantities, such as light intensity and gas concentration, have been the subject of …

The fabrication of a conventional photodetector array (PDA) involves complex
photolithography technology for pixel isolation. An easy process is essential for the mass …

The most effective and potential approach to improve the performance of heterojunction
photodetectors is to obtain favorable interfacial passivation by adding an insertion layer. In …

This study uses acetylacetone (acac) as an additive to control the size of the nanostructure
of solution-processed a-IGZO for ozone (O 3) gas sensor applications. It is found that by …

InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix
(AM) displays due to their decent field‐effect mobility and low off current. However, the wide …

Solution processing of metal oxide semiconductors (MOS) is widely used for electronic and
optoelectronic applications. However, the high-temperature annealing process that is …