The structural features and electrical properties of thin materials developed for phase
change memory (PCRAM 1) are highly influenced by the stoichiometry and the binding …

Phase change memory (PCM) based on chalcogenide compounds is considered to be an
excellent candidate for next-generation memory because of its high speed, low energy …

In the era of artificial intelligence and smart automated systems, the quest for efficient data
processing has driven exploration into neuromorphic systems, aiming to replicate brain …

Phase‐change random access memory is anticipated to break the bottleneck of the “storage
wall” due to its advantages in simultaneous data storage and in‐memory computing …

A chemical reaction between Sb and N2 was induced under high‐pressure (32–35 GPa)
and high‐temperature (1600–2200 K) conditions, generated by a laser heated diamond …

Phase-change materials have attracted much attention in the past three years due to its wide
applications in non-volatile optical fields. Although the amorphous-cubic phase transition of …

Phase-change random access memory (PCRAM) is enabled by a large resistance contrast
between amorphous and crystalline phases upon reversible switching between the two …

Optoelectronic hybrid phase-change memory, as a kind of nonvolatile storage with ultrafast
speed, has the potential to facilitate the integration of storage and computing and is …

An Al3Sc alloy doped Al3Sc–Sb2Te chalcogenide was put forward to avoid oxidation of
pure Sc and enhance data retention ability. Compared with conventional Ge2Sb2Te5 and …

Non-volatile memory based on phase-change materials can realize in-memory computing,
beneficial for the breakthrough of “memory wall”. Nevertheless, achieving both rapid …