We describe methodologies for integration of compound semiconductors with Si via buffer
layers and templates based on the GeSn system. These layers exhibit atomically flat surface …

A deposition rate model for CdTe via close-spaced sublimation spanning the sublimation
and diffusion-limited cases is presented. The approach consists of applying governing …

Long-wavelength HgCdTe heterostructures on silicon (100) substrates have been grown
using metal-organic vapor phase epitaxy. Test diodes have been fabricated from this …

This paper presents an overview of fundamental techniques for planar junction formation in
HgCdTe infrared detectors. At the beginning, the evolution of HgCdTe photodiode …

Epitaxial HgCdTe grown by molecular-beam epitaxy (MBE) is the material of choice for
advanced infrared (IR) detection and imaging devices. Its bandgap is easily tunable over the …

We demonstrate integration of cubic SiC (heterostructures and nanostructures) and
assemblies of Ge nanoscale islands with Si substrates via a conductive and reflective ZrB2 …

During the last two decades HgCdTe, InSb and InAs infrared (IR) photodiodes have de‐-
veloped rapidly for utilization in second generation thermal-imaging systems. Obviously …

We have demonstrated the successful growth of mercury cadmium telluride (MCT) infrared
detector material on silicon substrates. Growth on silicon increases the maximum achievable …

The standard process for manufacturing mercury cadmium telluride (MCT) infrared focal
plane arrays (FPAs) involves hybridising detectors onto a readout integrated circuit (ROIC) …

A current need in space-based instrumentation is a reconfigurable slit mask. Several
techniques for slit masks have been employed for ground-based astronomical …