Graphene–organic hybrid electronics

CH Kim, I Kymissis - Journal of Materials Chemistry C, 2017 - pubs.rsc.org
Both organic semiconductors and graphene now represent an established field of research
with great technological potential. Recently, impressive progress has been made in our …

Compact DC modeling of organic field-effect transistors: Review and perspectives

CH Kim, Y Bonnassieux… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
In spite of impressive improvements achieved for organic field-effect transistors (OFETs),
there is still a lack of theoretical understanding of their behaviors. Furthermore, it is …

Organic semiconductor density of states controls the energy level alignment at electrode interfaces

M Oehzelt, N Koch, G Heimel - Nature communications, 2014 - nature.com
Minimizing charge carrier injection barriers and extraction losses at interfaces between
organic semiconductors and metallic electrodes is critical for optimizing the performance of …

Nonempirical range-separated hybrid functionals for solids and molecules

JH Skone, M Govoni, G Galli - Physical Review B, 2016 - APS
Dielectric-dependent hybrid (DDH) functionals were recently shown to yield accurate energy
gaps and dielectric constants for a wide variety of solids, at a computational cost …

Efficient and layer‐dependent exciton pum** across atomically thin organic–inorganic type‐I heterostructures

L Zhang, A Sharma, Y Zhu, Y Zhang, B Wang… - Advanced …, 2018 - Wiley Online Library
The fundamental light–matter interactions in monolayer transition metal dichalcogenides
might be significantly engineered by hybridization with their organic counterparts, enabling …

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

A Turut, A Karabulut, K Ejderha, N Bıyıklı - Materials Science in …, 2015 - Elsevier
We have studied the admittance and current–voltage characteristics of the Au/Ti/Al 2 O 3/n-
GaAs structure. The Al 2 O 3 layer of about 5 nm was formed on the n-GaAs by atomic layer …

A compact model for organic field-effect transistors with improved output asymptotic behaviors

CH Kim, A Castro-Carranza, M Estrada… - … on Electron Devices, 2013 - ieeexplore.ieee.org
Here, we propose an advanced compact analytical current-voltage model for organic field-
effect transistors (OFETs), which can be incorporated into SPICE-type circuit simulators. We …

Decoupling the effects of self‐assembled monolayers on gold, silver, and copper organic transistor contacts

CH Kim, H Hlaing, JA Hong, JH Kim… - Advanced Materials …, 2015 - Wiley Online Library
In bottom‐contact organic field‐effect transistors (OFETs), the functionalization of
source/drain electrodes leads to a tailored surface chemistry for film growth and controlled …

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

DE Yıldız, A Karabulut, I Orak, A Turut - Journal of Materials Science …, 2021 - Springer
The electrical properties of Au/Ti/HfO 2/n-GaAs metal/insulating layer/semiconductor (MIS)
contact structures were analyzed in detail by the help of capacitance–voltage (C–V) and …

Charge distribution and contact resistance model for coplanar organic field-effect transistors

CH Kim, Y Bonnassieux… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
We propose a theoretical description of the charge distribution and the contact resistance in
coplanar organic field-effect transistors (OFETs). Based on the concept that the current in …