Due to the constraints imposed by physical effects and performance degradation, silicon-
based chip technology is facing certain limitations in sustaining the advancement of Moore's …

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …

Ultra-scaled transistors are of interest in the development of next-generation electronic
devices,–. Although atomically thin molybdenum disulfide (MoS2) transistors have been …

Silicon transistors are approaching their physical limit, calling for the emergence of a
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …

Two dimensional (2D) semiconductors have been established as promising candidates to
break through the short channel effect that existed in Si metal-oxide-semiconductor field …

Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2)
are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from …

Even though atomically thin 2D semiconductors have shown great potential for next‐
generation electronics, the low carrier mobility caused by poor metal–semiconductor …

With the advent of the “Big Data Era”, improving data storage density and computation
speed has become more and more urgent due to the rapid growth in different types of data …

Currently, hydrogel sensors for health monitoring require external tapes, bandages or
adhesives to immobilize them on the surface of human skin. However, these external fixation …

Abstract 2D semiconductors, such as transition metal dichalcogenides (TMDs) show a rare
combination of physical properties that include a large‐enough bandgap to ensure sufficient …