Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

In addition to the striking beauty inherent in their complex nature, fractals have become a
fundamental ingredient of nonlinear dynamics and chaos theory since they were defined in …

Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …

Self-powered broadband photodetectors (SPBDs) have received considerable attention
because of their significance in optoelectronic applications. However, limited by problems …

Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate
impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported …

The spatial distribution of defect-related and band-edge luminescence from GaN nanowires
grown by metal− organic chemical vapor deposition was studied by spatially resolved …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

We studied the roles of lightly doped carbon in a series of n-GaN Schottky diode epitaxial
structures on freestanding GaN substrates, and evaluated the effects of the do** on diode …

GaN/AlGaN core–shell nanowires with various Al compositions have been grown on GaN
nanowire array using selective area metal organic chemical vapor deposition technique …

Silicon (Si) based gallium nitride (GaN) possesses great development potential in
fabricating integrated photodetectors. Nevertheless, the large lattice and thermal mismatch …